Theory of band-edge optical nonlinearities in type-I and type-II quantum-well structures

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Abstract

A theoretical analysis of the many-body effects in the band-edge absorption spectra of highly excited type-I and type-II semiconductor quantum-well structures is presented. The situation of a homogeneous electron-hole plasma in a usual type-I structure is compared and contrasted to the situation in a type-II structure, where the electron and hole plasmas are spatially separated into adjacent layers. The plasma effects are determined through numerical solutions of a generalized Wannier equation, which accounts for dynamical exchange and screening effects as well as Pauli blocking. In the description of dynamical screening, an alternative to the so-called Shindo approximation is developed. The induced electric-field effects in the type-II systems are investigated by solving the coupled Schrödinger and Poisson equations for the charge carriers.

Original languageEnglish (US)
Pages (from-to)3031-3042
Number of pages12
JournalPhysical Review B
Volume44
Issue number7
DOIs
StatePublished - 1991

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Semiconductor quantum wells
nonlinearity
quantum wells
Plasmas
Screening
Electric field effects
screening
Electrons
Poisson equation
Charge carriers
Absorption spectra
electron plasma
charge carriers
absorption spectra
electric fields
approximation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Theory of band-edge optical nonlinearities in type-I and type-II quantum-well structures. / Binder, Rudolf; Galbraith, I.; Koch, Stephan W.

In: Physical Review B, Vol. 44, No. 7, 1991, p. 3031-3042.

Research output: Contribution to journalArticle

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