Theory of carrier concentration-dependent electronic behavior in layered cobaltates

H. Li, R. T. Clay, S. Mazumdar

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

A natural explanation for the carrier concentration-dependent electronic behavior in the layered cobaltates emerges within correlated-electron Hamiltonians with finite on-site and significant nearest neighbor hole-hole Coulomb repulsions. The nearest neighbor repulsion decreases hole double occupancy below hole density 13, but increases the same at higher hole densities. Our conclusion is valid for both single-band and three-band extended Hubbard Hamiltonians, and sheds light on concentration dependent eg′ hole occupancy within the latter.

Original languageEnglish (US)
Article number216401
JournalPhysical review letters
Volume106
Issue number21
DOIs
StatePublished - May 25 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Theory of carrier concentration-dependent electronic behavior in layered cobaltates'. Together they form a unique fingerprint.

  • Cite this