Theory of gain in InGaN quantum well lasers

W. W. Chow, A. F. Wright, A. Girndt, F. Jahnke, S. W. Koch

Research output: Contribution to journalConference articlepeer-review


An approach based on the Semiconductor Bloch Equation with carrier correlation effects treated at the level of quantum kinetic theory in the Markovian limit was developed for group II-nitride lasers characterization. It gives description of plasma and excitonic effects, which play important roles in the optical properties of group-II nitride lasers. The effects of inhomogeneous broadening due to compositional variations are also discussed.

Original languageEnglish (US)
Pages (from-to)39-40
Number of pages2
JournalLEOS Summer Topical Meeting
StatePublished - Jan 1 1997
EventProceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can
Duration: Aug 11 1997Aug 15 1997

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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