Theory of gain in InGaN quantum well lasers

W. W. Chow, A. F. Wright, A. Girndt, F. Jahnke, S. W. Koch

Research output: Contribution to journalConference articlepeer-review

Abstract

An approach based on the Semiconductor Bloch Equation with carrier correlation effects treated at the level of quantum kinetic theory in the Markovian limit was developed for group II-nitride lasers characterization. It gives description of plasma and excitonic effects, which play important roles in the optical properties of group-II nitride lasers. The effects of inhomogeneous broadening due to compositional variations are also discussed.

Original languageEnglish (US)
Pages (from-to)39-40
Number of pages2
JournalLEOS Summer Topical Meeting
StatePublished - Jan 1 1997
EventProceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can
Duration: Aug 11 1997Aug 15 1997

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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