Theory of laser gain in group-III nitrides

W. W. Chow, A. Knorr, Stephan W Koch

Research output: Contribution to journalArticle

87 Citations (Scopus)

Abstract

The gain and absorption spectra have been computed for the group-III nitride, GaN by numerically integrating Maxwell-Semiconductor-Bloch equations. This approach provides a consistent treatment of this wide-band gap material for experimental conditions ranging continuously from low temperatures to high temperatures. The results demonstrate the increased importance of the electron-hole Coulomb effects in the nitride lasers even at high temperatures and carrier densities.

Original languageEnglish (US)
Pages (from-to)754-756
Number of pages3
JournalApplied Physics Letters
Volume67
Issue number6
DOIs
StatePublished - Aug 7 1995
Externally publishedYes

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nitrides
lasers
broadband
absorption spectra

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Theory of laser gain in group-III nitrides. / Chow, W. W.; Knorr, A.; Koch, Stephan W.

In: Applied Physics Letters, Vol. 67, No. 6, 07.08.1995, p. 754-756.

Research output: Contribution to journalArticle

Chow, W. W. ; Knorr, A. ; Koch, Stephan W. / Theory of laser gain in group-III nitrides. In: Applied Physics Letters. 1995 ; Vol. 67, No. 6. pp. 754-756.
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