Abstract
The gain and absorption spectra have been computed for the group-III nitride, GaN by numerically integrating Maxwell-Semiconductor-Bloch equations. This approach provides a consistent treatment of this wide-band gap material for experimental conditions ranging continuously from low temperatures to high temperatures. The results demonstrate the increased importance of the electron-hole Coulomb effects in the nitride lasers even at high temperatures and carrier densities.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 754-756 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 67 |
| Issue number | 6 |
| DOIs | |
| State | Published - Aug 7 1995 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Theory of laser gain in group-III nitrides. / Chow, W. W.; Knorr, A.; Koch, Stephan W.
In: Applied Physics Letters, Vol. 67, No. 6, 07.08.1995, p. 754-756.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Theory of laser gain in group-III nitrides
AU - Chow, W. W.
AU - Knorr, A.
AU - Koch, Stephan W
PY - 1995/8/7
Y1 - 1995/8/7
N2 - The gain and absorption spectra have been computed for the group-III nitride, GaN by numerically integrating Maxwell-Semiconductor-Bloch equations. This approach provides a consistent treatment of this wide-band gap material for experimental conditions ranging continuously from low temperatures to high temperatures. The results demonstrate the increased importance of the electron-hole Coulomb effects in the nitride lasers even at high temperatures and carrier densities.
AB - The gain and absorption spectra have been computed for the group-III nitride, GaN by numerically integrating Maxwell-Semiconductor-Bloch equations. This approach provides a consistent treatment of this wide-band gap material for experimental conditions ranging continuously from low temperatures to high temperatures. The results demonstrate the increased importance of the electron-hole Coulomb effects in the nitride lasers even at high temperatures and carrier densities.
UR - http://www.scopus.com/inward/record.url?scp=0029638637&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029638637&partnerID=8YFLogxK
U2 - 10.1063/1.115215
DO - 10.1063/1.115215
M3 - Article
AN - SCOPUS:0029638637
VL - 67
SP - 754
EP - 756
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
ER -