Abstract
We present a microscopic many-body theory of optical refrigeration of p-doped semiconductors. Conceptually, the refrigeration mechanism is the upconversion of pump photons through absorption and subsequent luminescence by electron-hole pairs. The electron-hole pair can be an unbound pair, a pair bound by the attractive Coulomb interation (exciton), or a pair in which the hole is located at an acceptor site. Assuming the electron-hole pairs to be in quasi-thermal equilibrium, our theory calculates its absorption and luminescence spectra within a diagrammatic (real-time) Green's function approach at the self-consistent T-matrix level. The strong on-site Coulomb repulsion of holes at acceptor sites is taken into account via a truncation of the acceptor Fock space, which excludes states with higher than single-hole occupation. The resulting absorption and luminescence spectra are used in a cooling threshold analysis for GaAs that also takes into account other losses into heat. We compare the present results for p-doped GaAs with previous ones obtained for undoped GaAs.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 6907 |
| DOIs | |
| State | Published - 2008 |
| Event | Laser Refrigeration of Solids - San Jose, CA, United States Duration: Jan 23 2008 → Jan 24 2008 |
Other
| Other | Laser Refrigeration of Solids |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 1/23/08 → 1/24/08 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Theory of luminescence and optical refrigeration in p-doped semiconductors. / Rupper, G.; Kwong, Nai-Hang; Gu, B.; Binder, Rudolf.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6907 2008. 690705.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Theory of luminescence and optical refrigeration in p-doped semiconductors
AU - Rupper, G.
AU - Kwong, Nai-Hang
AU - Gu, B.
AU - Binder, Rudolf
PY - 2008
Y1 - 2008
N2 - We present a microscopic many-body theory of optical refrigeration of p-doped semiconductors. Conceptually, the refrigeration mechanism is the upconversion of pump photons through absorption and subsequent luminescence by electron-hole pairs. The electron-hole pair can be an unbound pair, a pair bound by the attractive Coulomb interation (exciton), or a pair in which the hole is located at an acceptor site. Assuming the electron-hole pairs to be in quasi-thermal equilibrium, our theory calculates its absorption and luminescence spectra within a diagrammatic (real-time) Green's function approach at the self-consistent T-matrix level. The strong on-site Coulomb repulsion of holes at acceptor sites is taken into account via a truncation of the acceptor Fock space, which excludes states with higher than single-hole occupation. The resulting absorption and luminescence spectra are used in a cooling threshold analysis for GaAs that also takes into account other losses into heat. We compare the present results for p-doped GaAs with previous ones obtained for undoped GaAs.
AB - We present a microscopic many-body theory of optical refrigeration of p-doped semiconductors. Conceptually, the refrigeration mechanism is the upconversion of pump photons through absorption and subsequent luminescence by electron-hole pairs. The electron-hole pair can be an unbound pair, a pair bound by the attractive Coulomb interation (exciton), or a pair in which the hole is located at an acceptor site. Assuming the electron-hole pairs to be in quasi-thermal equilibrium, our theory calculates its absorption and luminescence spectra within a diagrammatic (real-time) Green's function approach at the self-consistent T-matrix level. The strong on-site Coulomb repulsion of holes at acceptor sites is taken into account via a truncation of the acceptor Fock space, which excludes states with higher than single-hole occupation. The resulting absorption and luminescence spectra are used in a cooling threshold analysis for GaAs that also takes into account other losses into heat. We compare the present results for p-doped GaAs with previous ones obtained for undoped GaAs.
UR - http://www.scopus.com/inward/record.url?scp=43249129851&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=43249129851&partnerID=8YFLogxK
U2 - 10.1117/12.765276
DO - 10.1117/12.765276
M3 - Conference contribution
AN - SCOPUS:43249129851
SN - 9780819470829
VL - 6907
BT - Proceedings of SPIE - The International Society for Optical Engineering
ER -