Theory of luminescence and optical refrigeration in p-doped semiconductors

G. Rupper, Nai-Hang Kwong, B. Gu, Rudolf Binder

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

We present a microscopic many-body theory of optical refrigeration of p-doped semiconductors. Conceptually, the refrigeration mechanism is the upconversion of pump photons through absorption and subsequent luminescence by electron-hole pairs. The electron-hole pair can be an unbound pair, a pair bound by the attractive Coulomb interation (exciton), or a pair in which the hole is located at an acceptor site. Assuming the electron-hole pairs to be in quasi-thermal equilibrium, our theory calculates its absorption and luminescence spectra within a diagrammatic (real-time) Green's function approach at the self-consistent T-matrix level. The strong on-site Coulomb repulsion of holes at acceptor sites is taken into account via a truncation of the acceptor Fock space, which excludes states with higher than single-hole occupation. The resulting absorption and luminescence spectra are used in a cooling threshold analysis for GaAs that also takes into account other losses into heat. We compare the present results for p-doped GaAs with previous ones obtained for undoped GaAs.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6907
DOIs
Publication statusPublished - 2008
EventLaser Refrigeration of Solids - San Jose, CA, United States
Duration: Jan 23 2008Jan 24 2008

Other

OtherLaser Refrigeration of Solids
CountryUnited States
CitySan Jose, CA
Period1/23/081/24/08

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Rupper, G., Kwong, N-H., Gu, B., & Binder, R. (2008). Theory of luminescence and optical refrigeration in p-doped semiconductors. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6907). [690705] https://doi.org/10.1117/12.765276