Theory of momentum orientation relaxation in semiconductors

Rudolf H. Binder, Hilding S. Koehler, Nai Hang Kwong, Michael Bonitz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present numerical results for charge-carrier relaxation processes by carrier-carrier scattering in various semiconductor structures. Common to all examples is the aspect of anisotropy. Our results are based on a generalized quantum Boltzmann equation. Specifically, we solve the Kadanoff-Bayn equations for the relevant two-time Green's function. The systems under consideration are bulk GaAs with anisotropically photo-excited electrons and hexagonal CdS.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages690-695
Number of pages6
ISBN (Print)0819424056
StatePublished - Dec 1 1997
EventPhysics and Simulation of Optoelectronic Devices V - San Jose, CA, USA
Duration: Feb 10 1997Feb 14 1997

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2994
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices V
CitySan Jose, CA, USA
Period2/10/972/14/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Binder, R. H., Koehler, H. S., Kwong, N. H., & Bonitz, M. (1997). Theory of momentum orientation relaxation in semiconductors. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 690-695). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2994). Society of Photo-Optical Instrumentation Engineers.