Theory of momentum orientation relaxation in semiconductors

Rudolf Binder, Hilding S. Koehler, Nai-Hang Kwong, Michael Bonitz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present numerical results for charge-carrier relaxation processes by carrier-carrier scattering in various semiconductor structures. Common to all examples is the aspect of anisotropy. Our results are based on a generalized quantum Boltzmann equation. Specifically, we solve the Kadanoff-Bayn equations for the relevant two-time Green's function. The systems under consideration are bulk GaAs with anisotropically photo-excited electrons and hexagonal CdS.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages690-695
Number of pages6
Volume2994
ISBN (Print)0819424056
StatePublished - 1997
EventPhysics and Simulation of Optoelectronic Devices V - San Jose, CA, USA
Duration: Feb 10 1997Feb 14 1997

Other

OtherPhysics and Simulation of Optoelectronic Devices V
CitySan Jose, CA, USA
Period2/10/972/14/97

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Boltzmann equation
Relaxation processes
Charge carriers
Green's function
Crystal orientation
Momentum
Anisotropy
Scattering
Semiconductor materials
momentum
time functions
Electrons
charge carriers
Green's functions
anisotropy
scattering
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Binder, R., Koehler, H. S., Kwong, N-H., & Bonitz, M. (1997). Theory of momentum orientation relaxation in semiconductors. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2994, pp. 690-695). Society of Photo-Optical Instrumentation Engineers.

Theory of momentum orientation relaxation in semiconductors. / Binder, Rudolf; Koehler, Hilding S.; Kwong, Nai-Hang; Bonitz, Michael.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2994 Society of Photo-Optical Instrumentation Engineers, 1997. p. 690-695.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Binder, R, Koehler, HS, Kwong, N-H & Bonitz, M 1997, Theory of momentum orientation relaxation in semiconductors. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 2994, Society of Photo-Optical Instrumentation Engineers, pp. 690-695, Physics and Simulation of Optoelectronic Devices V, San Jose, CA, USA, 2/10/97.
Binder R, Koehler HS, Kwong N-H, Bonitz M. Theory of momentum orientation relaxation in semiconductors. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2994. Society of Photo-Optical Instrumentation Engineers. 1997. p. 690-695
Binder, Rudolf ; Koehler, Hilding S. ; Kwong, Nai-Hang ; Bonitz, Michael. / Theory of momentum orientation relaxation in semiconductors. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2994 Society of Photo-Optical Instrumentation Engineers, 1997. pp. 690-695
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