Abstract
A many-body theory for the electron-hole plasma in a semiconductor laser has been developed for 3-D bulk semiconductors and quasi-2-D quantum well structures. Starting from the generalized semiconductor Bloch equations and using a Pade approximation for the optical susceptibility, gain/absorption and refractive index spectra that clearly show the effects of Coulomb enhancement, bandgap renormalization, broadening, and plasma screening have been computed. The gain/absorption spectra for bulk and quantum well GaAs at different temperatures are shown and discussed. The influence of the Coulomb enhancement is especially pronounced in the low-temperature results.
Original language | English (US) |
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Pages | 132-133 |
Number of pages | 2 |
State | Published - Dec 1 1989 |
Event | Quantum Electronics and Laser Science Conference - Baltimore, MD, USA Duration: Apr 24 1989 → Apr 28 1989 |
Other
Other | Quantum Electronics and Laser Science Conference |
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City | Baltimore, MD, USA |
Period | 4/24/89 → 4/28/89 |
ASJC Scopus subject areas
- Engineering(all)