Abstract
A many-body theory for the electron-hole plasma in a semiconductor laser has been developed for 3-D bulk semiconductors and quasi-2-D quantum well structures. Starting from the generalized semiconductor Bloch equations and using a Pade approximation for the optical susceptibility, gain/absorption and refractive index spectra that clearly show the effects of Coulomb enhancement, bandgap renormalization, broadening, and plasma screening have been computed. The gain/absorption spectra for bulk and quantum well GaAs at different temperatures are shown and discussed. The influence of the Coulomb enhancement is especially pronounced in the low-temperature results.
| Original language | English (US) |
|---|---|
| Pages | 132-133 |
| Number of pages | 2 |
| State | Published - Dec 1 1989 |
| Event | Quantum Electronics and Laser Science Conference - Baltimore, MD, USA Duration: Apr 24 1989 → Apr 28 1989 |
Other
| Other | Quantum Electronics and Laser Science Conference |
|---|---|
| City | Baltimore, MD, USA |
| Period | 4/24/89 → 4/28/89 |
ASJC Scopus subject areas
- Engineering(all)