Theory of semiconductor laser cooling at low temperatures

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

We present a microscopic many-body theory of laser cooling of semiconductors. Using a standard diagrammatic Green's function approach, we calculate the absorption/luminescence spectra of a partially ionized electron-hole plasma in quasi-equilibrium at the self-consistent T-matrix level. This theory is applied to studying criteria of cooling threshold and efficiency in bulk GaAs, focusing mainly on the temperature range between 5 K and 100 K. In particular, we discuss the transition from the high temperature regime dominated by absorption in the e-h continuum to the low temperature regime dominated by resonant exciton absorption.

Original languageEnglish (US)
Pages (from-to)2489-2493
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
Issue number7
DOIs
StatePublished - Oct 2 2006
Event8th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, NOEKS 8 - Muenster, Germany
Duration: Feb 20 2006Feb 24 2006

ASJC Scopus subject areas

  • Condensed Matter Physics

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