Abstract
A theory for describing nonequilibrium dynamics in a semiconductor quantum-dot laser is presented. This theory is applied to a microcavity laser with a gain region consisting of an inhomogeneous distribution of quantum dots, a quantum-well wetting layer, and injection pumped bulk regions. Numerical results are presented and the effects of spectral hole burning, plasma heating, and many-body effects are analyzed.
Original language | English (US) |
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Pages (from-to) | 495-505 |
Number of pages | 11 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 41 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1 2005 |
Keywords
- Hot carrier
- Laser theory
- Nonequilibrium carrier dynamics
- Quantum-dot lasers
- Semiconductor lasers
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering