Theory of the Optical Stark Effect in Semiconductors

W. Schäfer, K. ‐H Schuldt, R. Binder

Research output: Contribution to journalArticle

47 Scopus citations

Abstract

The light‐induced changes of the properties of a semiconductor caused by an ultra‐short strong laser pulse with a central frequency well below the fundamental absorption edge are investigated. Renormalization and time evolution of one‐ and two‐particle properties are discussed using a nonequilibrium Green's function formalism. Numerical results for the absorption spectra are presented.

Original languageEnglish (US)
Pages (from-to)407-412
Number of pages6
Journalphysica status solidi (b)
Volume150
Issue number2
DOIs
StatePublished - Dec 1 1988
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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