Thermal annealing of InAs quantum dots on patterned GaAs substrates

M. Helfrich, J. Hendrickson, D. Rülke, H. Kalt, M. Hetterich, G. Khitrova, H. Gibbs, S. Linden, M. Wegener, D. Z. Hu, D. M. Schaadt

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the effect of in-situ thermal annealing on InAs quantum dots (QDs) grown site-selectively on pre-patterned GaAs substrates. We compare as grown and annealed samples. A morphological transition is observed where originally two QDs merge into one larger dot.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages217-218
Number of pages2
DOIs
StatePublished - Dec 1 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: Jul 25 2010Jul 30 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period7/25/107/30/10

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Keywords

  • Quantum dots
  • annealing
  • molecular beam epitaxy
  • site-selective growth

ASJC Scopus subject areas

  • Ecology, Evolution, Behavior and Systematics
  • Ecology
  • Plant Science
  • Physics and Astronomy(all)
  • Nature and Landscape Conservation

Cite this

Helfrich, M., Hendrickson, J., Rülke, D., Kalt, H., Hetterich, M., Khitrova, G., Gibbs, H., Linden, S., Wegener, M., Hu, D. Z., & Schaadt, D. M. (2011). Thermal annealing of InAs quantum dots on patterned GaAs substrates. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 217-218). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666332