Abstract
Nanoscale interfaces, such as grain boundaries (GBs) within a polycrystalline material, play an important role in suppressing the phonon heat transport. The interfacial thermal resistance R K of a GB has a strong dependence on the detailed interfacial atomic structure, including the misorientation between two grains and GB dislocations. Along this line, numerous molecular dynamics simulations on R K have been carried out on a twist Si GB. Owing to the challenge of measuring such a GB within a bulk material, these simulations are rarely compared with experimental data. In this work, a super-flexible 70-nm-thick Si thin film was hot pressed onto a Si wafer to represent a twist GB. The R K of the film-wafer interface was measured as a function of the rotation angle between the film and the wafer. The experimental data were further compared with an analytical model to interpret the twist angle dependence of the measured R K . It was found that the strain part of the grain-boundary energy is correlated with the measured twist-angle-dependent R K .
Original language | English (US) |
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Pages (from-to) | 53-59 |
Number of pages | 7 |
Journal | Materials Today Physics |
Volume | 6 |
DOIs | |
State | Published - Aug 2018 |
Keywords
- Hot press
- Phonon
- Strain energy
- Thermal boundary resistance
- Twist grain boundary
ASJC Scopus subject areas
- Materials Science(all)
- Energy (miscellaneous)
- Physics and Astronomy (miscellaneous)