Thermal boundary resistance correlated with strain energy in individual Si film-wafer twist boundaries

D. Xu, R. Hanus, Y. Xiao, S. Wang, G. J. Snyder, Q. Hao

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Nanoscale interfaces, such as grain boundaries (GBs) within a polycrystalline material, play an important role in suppressing the phonon heat transport. The interfacial thermal resistance R K of a GB has a strong dependence on the detailed interfacial atomic structure, including the misorientation between two grains and GB dislocations. Along this line, numerous molecular dynamics simulations on R K have been carried out on a twist Si GB. Owing to the challenge of measuring such a GB within a bulk material, these simulations are rarely compared with experimental data. In this work, a super-flexible 70-nm-thick Si thin film was hot pressed onto a Si wafer to represent a twist GB. The R K of the film-wafer interface was measured as a function of the rotation angle between the film and the wafer. The experimental data were further compared with an analytical model to interpret the twist angle dependence of the measured R K . It was found that the strain part of the grain-boundary energy is correlated with the measured twist-angle-dependent R K .

Original languageEnglish (US)
Pages (from-to)53-59
Number of pages7
JournalMaterials Today Physics
Volume6
DOIs
StatePublished - Aug 2018

Keywords

  • Hot press
  • Phonon
  • Strain energy
  • Thermal boundary resistance
  • Twist grain boundary

ASJC Scopus subject areas

  • Materials Science(all)
  • Energy (miscellaneous)
  • Physics and Astronomy (miscellaneous)

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