Three-band excitonic Rabi oscillations in semiconductor quantum wells

Rudolf Binder, M. Lindberg

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Optical Rabi oscillations in atomic two-level systems and excitonic Rabi oscillations in two-band semiconductors are already well established. In contrast to two-level (or two-band) Rabi oscillations, three-level (or three-band) Rabi oscillations offer a rich variety of oscillation dynamics involving both radiative and nonradiative (Raman) transitions. We analyze excitonic three-band Rabi oscillations in semiconductor quantum wells and study, in particular, the role of band-coupling effects and Coulomb effects.

Original languageEnglish (US)
Pages (from-to)2830-2836
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number4
StatePublished - 2000

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Semiconductor quantum wells
quantum wells
Semiconductor materials
oscillations

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Three-band excitonic Rabi oscillations in semiconductor quantum wells. / Binder, Rudolf; Lindberg, M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 61, No. 4, 2000, p. 2830-2836.

Research output: Contribution to journalArticle

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