Threshold conditions for an ultraviolet wavelength GaN quantum-well laser

W. W. Chow, M. Hagerott Crawford, A. Girndt, S. W. Koch

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

This paper describes an analysis of the threshold conditions for a GaN-AlGaN strained quantum-well (QW) laser. Gain spectra are computed using a many-body microscopic laser theory. The spontaneous emission rates are extracted from the gain spectra using a phenomenological expression based on energy conservation arguments. From the gain and spontaneous emission spectra, threshold current densities are estimated. Inhomogeneous broadening due to spatial variations in QW thickness are included in the analysis. Gain-current characteristics are determined for a number of laser heterostructure designs where the GaN QW width and Al composition of the AlGaN barrier material are varied.

Original languageEnglish (US)
Pages (from-to)514-519
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume4
Issue number3
DOIs
StatePublished - May 1 1998

Keywords

  • Laser theory
  • Many-body effects
  • Nitride materials/devices
  • Quantum-well lsers
  • Semiconductor device modeling
  • Semiconductor lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Threshold conditions for an ultraviolet wavelength GaN quantum-well laser'. Together they form a unique fingerprint.

  • Cite this