THz-emission from photoexcited semiconductor superlattices with applied ac and dc electric fields

T. Meier, P. Thomas, S. W. Koch

Research output: Contribution to conferencePaperpeer-review

Abstract

The THz-emission due to the field-driven dynamics of photoexcited carriers in semiconductor superlattices was investigated for the combined action of static and alternating fields. The applied field was written as F(t) = F0+F1 cos(ω-L$/t). For such a driving field, it was shown within a simple model, that the equations governing the intraband dynamics in the field-driven superlattice should be analogous to the ones describing the superconducting Josephson junction. The transport properties in this regime can be described by the picture of multi-photon assisted tunneling between Wannier-Stark states.

Original languageEnglish (US)
Pages218-219
Number of pages2
StatePublished - Jan 1 1999
EventProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA
Duration: May 23 1999May 28 1999

Other

OtherProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99)
CityBaltimore, MD, USA
Period5/23/995/28/99

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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