THz-emission from photoexcited semiconductor superlattices with applied ac and dc electric fields

T. Meier; P. Thomas; S. W. Koch

THz-emission from photoexcited semiconductor superlattices with applied ac and dc electric fields

T. Meier, P. Thomas, S. W. Koch

Optical Sciences, College of

Research output: Contribution to conference › Paper › peer-review

Abstract

The THz-emission due to the field-driven dynamics of photoexcited carriers in semiconductor superlattices was investigated for the combined action of static and alternating fields. The applied field was written as F(t) = F₀+F₁ cos(ω-L$/t). For such a driving field, it was shown within a simple model, that the equations governing the intraband dynamics in the field-driven superlattice should be analogous to the ones describing the superconducting Josephson junction. The transport properties in this regime can be described by the picture of multi-photon assisted tunneling between Wannier-Stark states.

Original language	English (US)
Pages	218-219
Number of pages	2
State	Published - Jan 1 1999
Event	Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA Duration: May 23 1999 → May 28 1999

Other

Other	Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99)
City	Baltimore, MD, USA
Period	5/23/99 → 5/28/99

ASJC Scopus subject areas

Physics and Astronomy(all)

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Cite this

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title = "THz-emission from photoexcited semiconductor superlattices with applied ac and dc electric fields",

abstract = "The THz-emission due to the field-driven dynamics of photoexcited carriers in semiconductor superlattices was investigated for the combined action of static and alternating fields. The applied field was written as F(t) = F0+F1 cos(ω-L$/t). For such a driving field, it was shown within a simple model, that the equations governing the intraband dynamics in the field-driven superlattice should be analogous to the ones describing the superconducting Josephson junction. The transport properties in this regime can be described by the picture of multi-photon assisted tunneling between Wannier-Stark states.",

author = "T. Meier and P. Thomas and Koch, {S. W.}",

year = "1999",

month = jan,

day = "1",

language = "English (US)",

pages = "218--219",

note = "Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) ; Conference date: 23-05-1999 Through 28-05-1999",

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TY - CONF

T1 - THz-emission from photoexcited semiconductor superlattices with applied ac and dc electric fields

AU - Meier, T.

AU - Thomas, P.

AU - Koch, S. W.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The THz-emission due to the field-driven dynamics of photoexcited carriers in semiconductor superlattices was investigated for the combined action of static and alternating fields. The applied field was written as F(t) = F0+F1 cos(ω-L$/t). For such a driving field, it was shown within a simple model, that the equations governing the intraband dynamics in the field-driven superlattice should be analogous to the ones describing the superconducting Josephson junction. The transport properties in this regime can be described by the picture of multi-photon assisted tunneling between Wannier-Stark states.

AB - The THz-emission due to the field-driven dynamics of photoexcited carriers in semiconductor superlattices was investigated for the combined action of static and alternating fields. The applied field was written as F(t) = F0+F1 cos(ω-L$/t). For such a driving field, it was shown within a simple model, that the equations governing the intraband dynamics in the field-driven superlattice should be analogous to the ones describing the superconducting Josephson junction. The transport properties in this regime can be described by the picture of multi-photon assisted tunneling between Wannier-Stark states.

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T2 - Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99)

Y2 - 23 May 1999 through 28 May 1999

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