Time-domain simulation of vertical external cavity semiconductor lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Power-scaling issues, such as the role of Amplified Spontaneous Emission, are studied in Vertical External Cavity Semiconductor Lasers (VECSEL) by numerical simulation. Comprehensive simulation approach is described.

Original languageEnglish (US)
Title of host publicationFrontiers in Optics, FiO 2005
PublisherOptical Society of America (OSA)
ISBN (Print)1557527970, 9781557527974
DOIs
StatePublished - Jan 1 2005
EventFrontiers in Optics, FiO 2005 - Tucson, AZ, United States
Duration: Oct 16 2005Oct 21 2005

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherFrontiers in Optics, FiO 2005
CountryUnited States
CityTucson, AZ
Period10/16/0510/21/05

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Kolesik, M., & Moloney, J. V. (2005). Time-domain simulation of vertical external cavity semiconductor lasers. In Frontiers in Optics, FiO 2005 (Optics InfoBase Conference Papers). Optical Society of America (OSA). https://doi.org/10.1364/fio.2005.jwa92