Time-domain vertical-external-cavity semiconductor laser simulation

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A time-domain simulator for Vertical External Cavity Semiconductor Lasers (VECSEL) is described in detail. The core of the model employs a digital filter method to model the optical properties of the active mirror over a wide range of frequencies, temperatures, and carrier densities. The method is also applicable without modifications to the time-domain simulation of semiconductor saturable mirrors (SESAM). As an illustration, ultrashort pulse generation is simulated in two kinds of devices: in a synchronously pumped VECSEL and in a laser passively mode-locked by SESAM.

Original languageEnglish (US)
Pages (from-to)588-596
Number of pages9
JournalIEEE Journal of Quantum Electronics
Volume43
Issue number7
DOIs
StatePublished - Jul 2007

Fingerprint

Semiconductor lasers
semiconductor lasers
Semiconductor materials
mirrors
cavities
Digital filters
Laser modes
Ultrashort pulses
Carrier concentration
Mirrors
digital filters
Optical properties
simulation
Simulators
laser modes
simulators
optical properties
pulses
Temperature
temperature

Keywords

  • Disk lasers
  • Modeling
  • SESAM
  • Surface-emitting lasers
  • Vertical external cavity semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Time-domain vertical-external-cavity semiconductor laser simulation. / Kolesik, Miroslav; Moloney, Jerome V.

In: IEEE Journal of Quantum Electronics, Vol. 43, No. 7, 07.2007, p. 588-596.

Research output: Contribution to journalArticle

@article{129fcfbf6c864334a09b563d3460a675,
title = "Time-domain vertical-external-cavity semiconductor laser simulation",
abstract = "A time-domain simulator for Vertical External Cavity Semiconductor Lasers (VECSEL) is described in detail. The core of the model employs a digital filter method to model the optical properties of the active mirror over a wide range of frequencies, temperatures, and carrier densities. The method is also applicable without modifications to the time-domain simulation of semiconductor saturable mirrors (SESAM). As an illustration, ultrashort pulse generation is simulated in two kinds of devices: in a synchronously pumped VECSEL and in a laser passively mode-locked by SESAM.",
keywords = "Disk lasers, Modeling, SESAM, Surface-emitting lasers, Vertical external cavity semiconductor lasers",
author = "Miroslav Kolesik and Moloney, {Jerome V}",
year = "2007",
month = "7",
doi = "10.1109/JQE.2007.898833",
language = "English (US)",
volume = "43",
pages = "588--596",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - Time-domain vertical-external-cavity semiconductor laser simulation

AU - Kolesik, Miroslav

AU - Moloney, Jerome V

PY - 2007/7

Y1 - 2007/7

N2 - A time-domain simulator for Vertical External Cavity Semiconductor Lasers (VECSEL) is described in detail. The core of the model employs a digital filter method to model the optical properties of the active mirror over a wide range of frequencies, temperatures, and carrier densities. The method is also applicable without modifications to the time-domain simulation of semiconductor saturable mirrors (SESAM). As an illustration, ultrashort pulse generation is simulated in two kinds of devices: in a synchronously pumped VECSEL and in a laser passively mode-locked by SESAM.

AB - A time-domain simulator for Vertical External Cavity Semiconductor Lasers (VECSEL) is described in detail. The core of the model employs a digital filter method to model the optical properties of the active mirror over a wide range of frequencies, temperatures, and carrier densities. The method is also applicable without modifications to the time-domain simulation of semiconductor saturable mirrors (SESAM). As an illustration, ultrashort pulse generation is simulated in two kinds of devices: in a synchronously pumped VECSEL and in a laser passively mode-locked by SESAM.

KW - Disk lasers

KW - Modeling

KW - SESAM

KW - Surface-emitting lasers

KW - Vertical external cavity semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=65549085088&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65549085088&partnerID=8YFLogxK

U2 - 10.1109/JQE.2007.898833

DO - 10.1109/JQE.2007.898833

M3 - Article

VL - 43

SP - 588

EP - 596

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 7

ER -