Time-resolved photoluminescence of type-I and type-II (GaIn)As Ga(NAs) heterostructures

K. Hantke, J. D. Heber, C. Schlichenmaier, A. Thränhardt, T. Meier, B. Kunert, K. Volz, W. Stolz, S. W. Koch, W. W. Rühle

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


A set of (Ga0.77 In0.23) As Ga (Nx As1-x) heterostructures is studied by time-resolved photoluminescence. Four samples with nitrogen concentrations from x=0.48% up to x=2.2% are investigated at different temperatures and with different excitation densities. The experiments suggest that the heterostructure band offset is type I for x=0.48% and type II for x=2.2%. The situation is more complex for x=0.72% and x=1.25%, since these samples are close to the transition from type I to type II. The experimental findings are analyzed using a detailed microscopic theory. Numerical calculations describe the measured data well. In particular, the interpretation of the experimental results concerning the band alignment is confirmed by the theoretical analysis.

Original languageEnglish (US)
Article number165320
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
StatePublished - Dec 14 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Time-resolved photoluminescence of type-I and type-II (GaIn)As Ga(NAs) heterostructures'. Together they form a unique fingerprint.

Cite this