Tin disulfide-an emerging layered metal dichalcogenide semiconductor: Materials properties and device characteristics

Yuan Huang, Eli Sutter, Jerzy T. Sadowski, Mircea Cotlet, Oliver L.A. Monti, David A. Racke, Mahesh R. Neupane, Darshana Wickramaratne, Roger K. Lake, Bruce A. Parkinson, Peter Sutter

Research output: Contribution to journalArticle

259 Scopus citations

Abstract

Layered metal dichalcogenides have attracted significant interest as a family of single- and few-layer materials that show new physics and are of interest for device applications. Here, we report a comprehensive characterization of the properties of tin disulfide (SnS2), an emerging semiconducting metal dichalcogenide, down to the monolayer limit. Using flakes exfoliated from layered bulk crystals, we establish the characteristics of single- and few-layer SnS2 in optical and atomic force microscopy, Raman spectroscopy and transmission electron microscopy. Band structure measurements in conjunction with ab initio calculations and photoluminescence spectroscopy show that SnS2 is an indirect bandgap semiconductor over the entire thickness range from bulk to single-layer. Field effect transport in SnS2 supported by SiO2/Si suggests predominant scattering by centers at the support interface. Ultrathin transistors show on-off current ratios >106, as well as carrier mobilities up to 230 cm2/(V s), minimal hysteresis, and near-ideal subthreshold swing for devices screened by a high-k (deionized water) top gate. SnS2 transistors are efficient photodetectors but, similar to other metal dichalcogenides, show a relatively slow response to pulsed irradiation, likely due to adsorbate-induced long-lived extrinsic trap states.

Original languageEnglish (US)
Pages (from-to)10743-10755
Number of pages13
JournalACS Nano
Volume8
Issue number10
DOIs
StatePublished - Oct 28 2014

Keywords

  • 2D materials
  • charge transport
  • field-effect transistor
  • monolayer
  • photodetector
  • tin disulfide

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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    Huang, Y., Sutter, E., Sadowski, J. T., Cotlet, M., Monti, O. L. A., Racke, D. A., Neupane, M. R., Wickramaratne, D., Lake, R. K., Parkinson, B. A., & Sutter, P. (2014). Tin disulfide-an emerging layered metal dichalcogenide semiconductor: Materials properties and device characteristics. ACS Nano, 8(10), 10743-10755. https://doi.org/10.1021/nn504481r