Transient gain spectroscopy of (GaIn)As quantum wells: Experiment and microscopic analysis

C. Lange, S. Chatterjee, C. Schlichenmaier, A. Thränhardt, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, G. Khitrova, H. M. Gibbs

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13 Scopus citations

Abstract

Transient gain measurements are performed for (GaIn)As quantum well structures. Gain up to gL=2 × 10-3 per quantum well is observed on a time scale of several hundred picoseconds. A microscopic theory quantitatively provides theoretical support and yields the carrier density as a function of time by matching the spectral shapes and intensities to the experiment. The decay rate of the population density is found to be proportional to the carrier density, which underlines the importance of monomolecular recombination processes.

Original languageEnglish (US)
Article number251102
JournalApplied Physics Letters
Volume90
Issue number25
DOIs
StatePublished - Aug 2 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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