Transient many-body effects in the semiconductor optical Stark effect: A numerical study

Rudolf Binder, Stephan W Koch, M. Lindberg, W. Schäfer, F. Jahnke

Research output: Contribution to journalArticle

81 Citations (Scopus)

Abstract

A comprehensive numerical study of the optical Stark effect and associated phenomena in semiconductors is presented. The results are obtained from numerical solutions of the full semiconductor Bloch equations for bulk and quantum-well structures. Coherent oscillations, the optical Stark effect, and adiabatic following, i.e., ultrafast bleaching and recovery of the exciton, are discussed. The relative importance of the different contributions in the semiconductor Bloch equations is identified. Optical-absorption spectra are computed for different exciton dephasing models and a large variety of pump-probe excitation parameters.

Original languageEnglish (US)
Pages (from-to)6520-6529
Number of pages10
JournalPhysical Review B
Volume43
Issue number8
DOIs
StatePublished - 1991

Fingerprint

Stark effect
Semiconductor materials
Excitons
excitons
bleaching
Bleaching
Light absorption
Semiconductor quantum wells
optical spectrum
Absorption spectra
optical absorption
recovery
quantum wells
Pumps
pumps
absorption spectra
Recovery
oscillations
probes
excitation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Transient many-body effects in the semiconductor optical Stark effect : A numerical study. / Binder, Rudolf; Koch, Stephan W; Lindberg, M.; Schäfer, W.; Jahnke, F.

In: Physical Review B, Vol. 43, No. 8, 1991, p. 6520-6529.

Research output: Contribution to journalArticle

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