Transient oscillations and dynamic Stark effect in semiconductors

M. Lindberg, S. W. Koch

Research output: Contribution to journalArticlepeer-review

82 Scopus citations


Oscillatory structures in the differential probe transmission spectra of semiconductors are calculated assuming pump-probe excitation with very short pulses. For the case of resonant interband excitation the oscillations occur around the central pump frequency. They evolve into the spectral hole with increasing temporal overlap between pump and probe pulses. Under nonresonant excitation conditions, oscillatory structures around the exciton resonance are computed. These oscillations occur as precursers of the optical Stark shift.

Original languageEnglish (US)
Pages (from-to)7607-7614
Number of pages8
JournalPhysical Review B
Issue number11
StatePublished - Jan 1 1988

ASJC Scopus subject areas

  • Condensed Matter Physics


Dive into the research topics of 'Transient oscillations and dynamic Stark effect in semiconductors'. Together they form a unique fingerprint.

Cite this