Transient oscillations and dynamic Stark effect in semiconductors

M. Lindberg, Stephan W Koch

Research output: Contribution to journalArticle

81 Citations (Scopus)

Abstract

Oscillatory structures in the differential probe transmission spectra of semiconductors are calculated assuming pump-probe excitation with very short pulses. For the case of resonant interband excitation the oscillations occur around the central pump frequency. They evolve into the spectral hole with increasing temporal overlap between pump and probe pulses. Under nonresonant excitation conditions, oscillatory structures around the exciton resonance are computed. These oscillations occur as precursers of the optical Stark shift.

Original languageEnglish (US)
Pages (from-to)7607-7614
Number of pages8
JournalPhysical Review B
Volume38
Issue number11
DOIs
StatePublished - 1988

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transient oscillations
Stark effect
Pumps
pumps
Semiconductor materials
probes
excitation
oscillations
pulses
Excitons
excitons
shift

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Transient oscillations and dynamic Stark effect in semiconductors. / Lindberg, M.; Koch, Stephan W.

In: Physical Review B, Vol. 38, No. 11, 1988, p. 7607-7614.

Research output: Contribution to journalArticle

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