Transmission electron microscopy study of metamorphic III-Sb VECSELs on GaAs/AlGaAs distributed Bragg reflectors

P. Ahirwar, D. Shima, T. J. Rotter, S. Clark, C. P. Hains, G. Balakrishnan, Alexandre Laurain, Jorg Hader, Yi Ying Lai, Tsuei Lian Wang, Mike Yarborough, Jerome V Moloney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The growth of antimonide vertical external cavity surface emitting lasers (VECSELs) for 1.8 to 2.8 μm emission wavelength is typically based on InGaAsSb/AlGaAsSb quantum wells on GaSb/AlAsSb DBRs which are in turn grown on GaSb substrates. Thus the entire structure is lattice matched to GaSb's lattice constant of 6.09 Å. The growth of such VECSELs on GaAs/AlGaAs DBRs could be of significant advantage on account of a more mature DBR technology based on GaAs substrates, better thermal conductivity of the III-As DBRs compared to the III-Sb DBRs and better etch stop recipes for arsenide semiconductors compared to antimonides. However, the growth of such a laser would involve overcoming a 7.8% mismatch between the active region and the GaAs/AlGaAs DBR. Furthermore, the vertical cavity structure requires the quantum wells to be in very close proximity to the 7.8% mismatched GaSb/GaAs interface.1 The challenge is therefore to reduce the threading dislocation density in the active region without a very thick metamorphic buffer or dislocation bending layers.

Original languageEnglish (US)
Title of host publication2012 IEEE Photonics Conference, IPC 2012
Pages699-700
Number of pages2
DOIs
StatePublished - 2012
Event25th IEEE Photonics Conference, IPC 2012 - Burlingame, CA, United States
Duration: Sep 23 2012Sep 27 2012

Other

Other25th IEEE Photonics Conference, IPC 2012
CountryUnited States
CityBurlingame, CA
Period9/23/129/27/12

Fingerprint

Distributed Bragg reflectors
Surface emitting lasers
Transmission electron microscopy
Semiconductor quantum wells
Substrates
Crystal lattices
Lattice constants
Thermal conductivity
Semiconductor materials
Wavelength
Lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ahirwar, P., Shima, D., Rotter, T. J., Clark, S., Hains, C. P., Balakrishnan, G., ... Moloney, J. V. (2012). Transmission electron microscopy study of metamorphic III-Sb VECSELs on GaAs/AlGaAs distributed Bragg reflectors. In 2012 IEEE Photonics Conference, IPC 2012 (pp. 699-700). [6358814] https://doi.org/10.1109/IPCon.2012.6358814

Transmission electron microscopy study of metamorphic III-Sb VECSELs on GaAs/AlGaAs distributed Bragg reflectors. / Ahirwar, P.; Shima, D.; Rotter, T. J.; Clark, S.; Hains, C. P.; Balakrishnan, G.; Laurain, Alexandre; Hader, Jorg; Lai, Yi Ying; Wang, Tsuei Lian; Yarborough, Mike; Moloney, Jerome V.

2012 IEEE Photonics Conference, IPC 2012. 2012. p. 699-700 6358814.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ahirwar, P, Shima, D, Rotter, TJ, Clark, S, Hains, CP, Balakrishnan, G, Laurain, A, Hader, J, Lai, YY, Wang, TL, Yarborough, M & Moloney, JV 2012, Transmission electron microscopy study of metamorphic III-Sb VECSELs on GaAs/AlGaAs distributed Bragg reflectors. in 2012 IEEE Photonics Conference, IPC 2012., 6358814, pp. 699-700, 25th IEEE Photonics Conference, IPC 2012, Burlingame, CA, United States, 9/23/12. https://doi.org/10.1109/IPCon.2012.6358814
Ahirwar P, Shima D, Rotter TJ, Clark S, Hains CP, Balakrishnan G et al. Transmission electron microscopy study of metamorphic III-Sb VECSELs on GaAs/AlGaAs distributed Bragg reflectors. In 2012 IEEE Photonics Conference, IPC 2012. 2012. p. 699-700. 6358814 https://doi.org/10.1109/IPCon.2012.6358814
Ahirwar, P. ; Shima, D. ; Rotter, T. J. ; Clark, S. ; Hains, C. P. ; Balakrishnan, G. ; Laurain, Alexandre ; Hader, Jorg ; Lai, Yi Ying ; Wang, Tsuei Lian ; Yarborough, Mike ; Moloney, Jerome V. / Transmission electron microscopy study of metamorphic III-Sb VECSELs on GaAs/AlGaAs distributed Bragg reflectors. 2012 IEEE Photonics Conference, IPC 2012. 2012. pp. 699-700
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AU - Hains, C. P.

AU - Balakrishnan, G.

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