TRANSPORT DESCRIPTION OF X-RAY PHOTOELECTRON EMISSION IN THICK TARGETS.

B. D. Ganapol, W. L. Filippone, J. C. Garth

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

The proper description of energy deposition and transfer of photoelectrons generated in microelectronic structures is described as essential in assessing the vulnerability of very large scale integrated circuits (VLSI) to penetrating radiation. Diffusion models coupled with the continuous energy deposition approximation have found widespread use primarily because of simplicity and general applicability. This paper attempts to address model reliability by first establishing a realistic benchmark solution based on electron transport theory and then comparing the transport result to several well know diffusion models.

Original languageEnglish (US)
Pages (from-to)438-439
Number of pages2
JournalTransactions of the American Nuclear Society
Volume46
StatePublished - Dec 1 1984

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Nuclear Energy and Engineering
  • Industrial and Manufacturing Engineering

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