Transversal light forces in semiconductors

M. Lindberg, R. Binder

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

Original languageEnglish (US)
Pages (from-to)1119-1135
Number of pages17
JournalJournal of Physics Condensed Matter
Volume15
Issue number7
DOIs
StatePublished - Feb 26 2003

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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