Transversal light forces in semiconductors

M. Lindberg, Rudolf Binder

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

Original languageEnglish (US)
Pages (from-to)1119-1135
Number of pages17
JournalJournal of Physics Condensed Matter
Volume15
Issue number7
DOIs
StatePublished - Feb 26 2003

Fingerprint

Excitons
Semiconductor materials
excitons
Plasmas
Electrons
Charge carriers
Equations of motion
Distribution functions
charge carriers
equations of motion
distribution functions
Polarization
Atoms
Molecules
Kinetics
LDS 751
kinetics
polarization
atoms
molecules

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Transversal light forces in semiconductors. / Lindberg, M.; Binder, Rudolf.

In: Journal of Physics Condensed Matter, Vol. 15, No. 7, 26.02.2003, p. 1119-1135.

Research output: Contribution to journalArticle

@article{f3530804f05046859ea7aac658d4037e,
title = "Transversal light forces in semiconductors",
abstract = "The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.",
author = "M. Lindberg and Rudolf Binder",
year = "2003",
month = "2",
day = "26",
doi = "10.1088/0953-8984/15/7/309",
language = "English (US)",
volume = "15",
pages = "1119--1135",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "7",

}

TY - JOUR

T1 - Transversal light forces in semiconductors

AU - Lindberg, M.

AU - Binder, Rudolf

PY - 2003/2/26

Y1 - 2003/2/26

N2 - The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

AB - The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

UR - http://www.scopus.com/inward/record.url?scp=0037466862&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037466862&partnerID=8YFLogxK

U2 - 10.1088/0953-8984/15/7/309

DO - 10.1088/0953-8984/15/7/309

M3 - Article

VL - 15

SP - 1119

EP - 1135

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 7

ER -