Treatment of copper from Cu CMP waste streams using polyethyleneimine

Worawan Kay Maketon, Kimberly L. Ogden

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Commercially available Cu CMP waste treatment processes involve: 1) pretreatment chemistry using oxidizers to break down complexed copper resulting in precipitation of copper in the form of copper hydroxide; 2) microfiltration of both slurry particles and copper hydroxide; and 3) ion exchange to remove Cu2+ ions. Ion exchange resins used to remove Cu2+ ions are limited to only removing cations and also have a low efficiency in binding Cu2+ ions. The treatment strategy to be evaluated here only requires using two processes to remove the copper from Cu CMP waste-filtration to remove the particles followed by chelation. This paper focuses on the chelation step. The chelator of interest is polyethyleneimine (PEI) bound to agarose beads. PEI removes both Cu2+ ions and Cu-complexes. The particles from slurry in the actual Cu CMP waste were removed by filtration before the experiment. The results show that PEI has a higher binding capacity for Cu2+ ions than ion exchange resins. Its performance and reproducibility did not change after multiple regenerations. Furthermore, PEI has the ability to bind Cu-complexes through electrostatic attraction. Although the bonds aren't strong, the result is more overall copper removal from the waste stream. The copper component of the Cu CMP waste was concentrated 12 fold using this system.

Original languageEnglish (US)
Article number4589038
Pages (from-to)481-485
Number of pages5
JournalIEEE Transactions on Semiconductor Manufacturing
Volume21
Issue number3
DOIs
StatePublished - Aug 1 2008

Keywords

  • Chelators
  • Chemical-mechanical planarization (CMP)
  • Cu CMP waste treatment
  • Polyethyleneimine (PEI)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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