Trend of shape resonance-induced features in the angular distribution parameter as a function of photon energy for carbon, silicon and germanium tetrac

M. N. Piancastelli, P. R. Keller, J. W. Taylor, F. A. Grimm, T. A. Carlson, M. O. Krause, D. Lichtenberger

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

The angular distribution parameter as a function of photon energy, β(hν), has been measured in the 13-27 e V range using synchrotron radiation for the five valence orbitais in silicon and germanium tetrachlorides. The results have been compared with those previously reported for carbon tetrachloride. In particular, the trend of shape resonanceinduced features has been followed along the valence isoelectronic series CCl4-SiCl4-GeCl4 for the 1e and 2t2 orbitals. As the atomic number of the central atom increases, the shape resonances move toward the threshold ionization energy for a particular molecular orbital.

Original languageEnglish (US)
Pages (from-to)205-214
Number of pages10
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume34
Issue number3
DOIs
StatePublished - 1984

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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