Tribological and kinetic characterization of 300-mm copper chemical mechanical planarization process

Z. Han, Y. Zhuang, Y. Sampurno, A. Meled, Y. Jiao, X. Wei, J. Cheng, M. Moinpour, D. Hooper, A. Philipossian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The tribological and kinetic attributes of 300-mm copper chemical mechanical planarization process were characterized in this study. Coefficient of friction (COF) ranged from 0.39 to 0.59 for the Cabot Microelectronics Corporation D100 concentrically grooved pad, indicating that boundary lubrication was the dominant tribological mechanism. In comparison, COF decreased sharply from 0.55 to 0.03 for the Dow Electronic Materials IC1000 K-groove pad, indicating that the tribological mechanism transitioned from boundary lubrication to partial lubrication. For both pads, copper removal rate exhibited highly non-Prestonian behavior. A two-step modified Langmuir-Hinshelwood model was used to simulate copper removal rate, wafer surface reaction temperature, as well as chemical and mechanical rate constants. The simulated copper removal rates agreed very well with the experimental values. The simulated chemical rate constant to mechanical rate constant Tatios indicated that the IC1000 pad generally produced a more mechanically controlled removal mechanism in this study.

Original languageEnglish (US)
Title of host publicationChina Semiconductor Technology International Conference 2010, CSTIC 2010
Pages587-592
Number of pages6
Edition1
DOIs
StatePublished - Dec 1 2010
EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
Duration: Mar 18 2010Mar 19 2010

Publication series

NameECS Transactions
Number1
Volume27
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherChina Semiconductor Technology International Conference 2010, CSTIC 2010
CountryChina
CityShanghai
Period3/18/103/19/10

ASJC Scopus subject areas

  • Engineering(all)

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    Han, Z., Zhuang, Y., Sampurno, Y., Meled, A., Jiao, Y., Wei, X., Cheng, J., Moinpour, M., Hooper, D., & Philipossian, A. (2010). Tribological and kinetic characterization of 300-mm copper chemical mechanical planarization process. In China Semiconductor Technology International Conference 2010, CSTIC 2010 (1 ed., pp. 587-592). (ECS Transactions; Vol. 27, No. 1). https://doi.org/10.1149/1.3360679