Tribological and kinetic characterization of 300-mm copper chemical mechanical planarization process

Z. Han, Y. Zhuang, Y. Sampurno, A. Meled, Y. Jiao, X. Wei, J. Cheng, M. Moinpour, D. Hooper, Ara Philipossian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The tribological and kinetic attributes of 300-mm copper chemical mechanical planarization process were characterized in this study. Coefficient of friction (COF) ranged from 0.39 to 0.59 for the Cabot Microelectronics Corporation D100 concentrically grooved pad, indicating that boundary lubrication was the dominant tribological mechanism. In comparison, COF decreased sharply from 0.55 to 0.03 for the Dow Electronic Materials IC1000 K-groove pad, indicating that the tribological mechanism transitioned from boundary lubrication to partial lubrication. For both pads, copper removal rate exhibited highly non-Prestonian behavior. A two-step modified Langmuir-Hinshelwood model was used to simulate copper removal rate, wafer surface reaction temperature, as well as chemical and mechanical rate constants. The simulated copper removal rates agreed very well with the experimental values. The simulated chemical rate constant to mechanical rate constant Tatios indicated that the IC1000 pad generally produced a more mechanically controlled removal mechanism in this study.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages587-592
Number of pages6
Volume27
Edition1
DOIs
StatePublished - 2010
EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
Duration: Mar 18 2010Mar 19 2010

Other

OtherChina Semiconductor Technology International Conference 2010, CSTIC 2010
CountryChina
CityShanghai
Period3/18/103/19/10

Fingerprint

Chemical mechanical polishing
Lubrication
Copper
Bearing pads
Rate constants
Kinetics
Friction
Surface reactions
Microelectronics
Industry
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Han, Z., Zhuang, Y., Sampurno, Y., Meled, A., Jiao, Y., Wei, X., ... Philipossian, A. (2010). Tribological and kinetic characterization of 300-mm copper chemical mechanical planarization process. In ECS Transactions (1 ed., Vol. 27, pp. 587-592) https://doi.org/10.1149/1.3360679

Tribological and kinetic characterization of 300-mm copper chemical mechanical planarization process. / Han, Z.; Zhuang, Y.; Sampurno, Y.; Meled, A.; Jiao, Y.; Wei, X.; Cheng, J.; Moinpour, M.; Hooper, D.; Philipossian, Ara.

ECS Transactions. Vol. 27 1. ed. 2010. p. 587-592.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Han, Z, Zhuang, Y, Sampurno, Y, Meled, A, Jiao, Y, Wei, X, Cheng, J, Moinpour, M, Hooper, D & Philipossian, A 2010, Tribological and kinetic characterization of 300-mm copper chemical mechanical planarization process. in ECS Transactions. 1 edn, vol. 27, pp. 587-592, China Semiconductor Technology International Conference 2010, CSTIC 2010, Shanghai, China, 3/18/10. https://doi.org/10.1149/1.3360679
Han Z, Zhuang Y, Sampurno Y, Meled A, Jiao Y, Wei X et al. Tribological and kinetic characterization of 300-mm copper chemical mechanical planarization process. In ECS Transactions. 1 ed. Vol. 27. 2010. p. 587-592 https://doi.org/10.1149/1.3360679
Han, Z. ; Zhuang, Y. ; Sampurno, Y. ; Meled, A. ; Jiao, Y. ; Wei, X. ; Cheng, J. ; Moinpour, M. ; Hooper, D. ; Philipossian, Ara. / Tribological and kinetic characterization of 300-mm copper chemical mechanical planarization process. ECS Transactions. Vol. 27 1. ed. 2010. pp. 587-592
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