In this study, the tribological, thermal and kinetic attributes of Ti CMP process was investigated. Hitachi Chemical HS-T815 and HS-T605 slurries with different H2O2 concentrations were used to polish 200-mm blanket Ti wafers under different polishing conditions. Under the polishing pressure of 10.3 KPa, the measured shear force between the pad and wafer surface decreased significantly while the Ti removal rate increased significantly when small amount of H2O2 was added to the slurries. On the other hand, the shear force decreased and the removal rate increased slowly with further increase in the H2O2 concentration. A particle indentation model was used to explain the shear force behavior and Ti removal rate mechanism. The shear force decreases slightly when 0.06% H 2O2 was added to the HS-T815 slurry and then remained stable with further increase in the H2O2 concentration.