Tribological and kinetical analysis of barrier metal polishing for next generation copper interconnects

R. Duyos-Mateo, X. Gu, T. Nemoto, S. Sugawa, Y. Zhuang, Y. Sampurno, A. Philipossian, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, the tribological, thermal and kinetic attributes of Ti CMP process was investigated. Hitachi Chemical HS-T815 and HS-T605 slurries with different H2O2 concentrations were used to polish 200-mm blanket Ti wafers under different polishing conditions. Under the polishing pressure of 10.3 KPa, the measured shear force between the pad and wafer surface decreased significantly while the Ti removal rate increased significantly when small amount of H2O2 was added to the slurries. On the other hand, the shear force decreased and the removal rate increased slowly with further increase in the H2O2 concentration. A particle indentation model was used to explain the shear force behavior and Ti removal rate mechanism. The shear force decreases slightly when 0.06% H 2O2 was added to the HS-T815 slurry and then remained stable with further increase in the H2O2 concentration.

Original languageEnglish (US)
Title of host publicationChina Semiconductor Technology International Conference 2011, CSTIC 2011
Pages627-632
Number of pages6
Edition1
DOIs
StatePublished - Jul 1 2011
Event10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China
Duration: Mar 13 2011Mar 14 2011

Publication series

NameECS Transactions
Number1
Volume34
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th China Semiconductor Technology International Conference 2011, CSTIC 2011
CountryChina
CityShanghai
Period3/13/113/14/11

ASJC Scopus subject areas

  • Engineering(all)

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