Tribological, thermal, and kinetic attributes of 300 vs. 450 mm chemical mechanical planarization processes

Yubo Jiao, Xiaoyan Liao, Changhong Wu, Yun Zhuang, Yasa Sampurno, Ara Philipossian, Siannie Theng, Michael Goldstein

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An existing 300 mm CMP tool has been modified to polish 450 mm wafers in order to demonstrate experimentally whether any differences exist in the tribological and thermal characteristics of the two processes, and from that, to infer whether one can expect any removal rate differences between the two systems. Results suggest that, within the ranges of parameter investigated, the two systems behave similarly in terms of their coefficients of friction and lubrication regimes. Additionally, it is shown that the 450 mm process, once adjusted for its platen velocity, runs only slightly warmer (by 1 to 2°C) than its 300 mm counterpart. Experimental data, coupled with copper removal rate simulations show that the wafer surface reaction temperatures of the 450 mm adjusted process are higher (by 2 to 3°C) than the 300 mm process. Consequently, simulated copper removal rates for the 450 mm adjusted process are higher (by 8 to 31%) than those of the 300 mm process.

Original languageEnglish (US)
Title of host publication2012 SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2012
Pages272-277
Number of pages6
DOIs
StatePublished - Jul 23 2012
Event2012 23rd Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2012 - Saratoga Springs, NY, United States
Duration: May 15 2012May 17 2012

Publication series

NameASMC (Advanced Semiconductor Manufacturing Conference) Proceedings
ISSN (Print)1078-8743

Other

Other2012 23rd Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2012
CountryUnited States
CitySaratoga Springs, NY
Period5/15/125/17/12

    Fingerprint

Keywords

  • 300 vs. 450 mm
  • chemical mechanical planarization
  • coefficient of friction
  • removal rate
  • wafer surface reaction temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Engineering(all)
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Jiao, Y., Liao, X., Wu, C., Zhuang, Y., Sampurno, Y., Philipossian, A., Theng, S., & Goldstein, M. (2012). Tribological, thermal, and kinetic attributes of 300 vs. 450 mm chemical mechanical planarization processes. In 2012 SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2012 (pp. 272-277). [6212910] (ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings). https://doi.org/10.1109/ASMC.2012.6212910