Tribological, thermal, and kinetic attributes of 300 vs. 450 mm chemical mechanical planarization processes

Yubo Jiao, Xiaoyan Liao, Changhong Wu, Yun Zhuang, Yasa Sampurno, Ara Philipossian, Siannie Theng, Michael Goldstein

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An existing 300 mm CMP tool has been modified to polish 450 mm wafers in order to demonstrate experimentally whether any differences exist in the tribological and thermal characteristics of the two processes, and from that, to infer whether one can expect any removal rate differences between the two systems. Results suggest that, within the ranges of parameter investigated, the two systems behave similarly in terms of their coefficients of friction and lubrication regimes. Additionally, it is shown that the 450 mm process, once adjusted for its platen velocity, runs only slightly warmer (by 1 to 2°C) than its 300 mm counterpart. Experimental data, coupled with copper removal rate simulations show that the wafer surface reaction temperatures of the 450 mm adjusted process are higher (by 2 to 3°C) than the 300 mm process. Consequently, simulated copper removal rates for the 450 mm adjusted process are higher (by 8 to 31%) than those of the 300 mm process.

Original languageEnglish (US)
Title of host publicationASMC (Advanced Semiconductor Manufacturing Conference) Proceedings
Pages272-277
Number of pages6
DOIs
StatePublished - 2012
Event2012 23rd Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2012 - Saratoga Springs, NY, United States
Duration: May 15 2012May 17 2012

Other

Other2012 23rd Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2012
CountryUnited States
CitySaratoga Springs, NY
Period5/15/125/17/12

Fingerprint

Chemical mechanical polishing
Kinetics
Copper
Surface reactions
Lubrication
Friction
Hot Temperature
Temperature

Keywords

  • 300 vs. 450 mm
  • chemical mechanical planarization
  • coefficient of friction
  • removal rate
  • wafer surface reaction temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Jiao, Y., Liao, X., Wu, C., Zhuang, Y., Sampurno, Y., Philipossian, A., ... Goldstein, M. (2012). Tribological, thermal, and kinetic attributes of 300 vs. 450 mm chemical mechanical planarization processes. In ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings (pp. 272-277). [6212910] https://doi.org/10.1109/ASMC.2012.6212910

Tribological, thermal, and kinetic attributes of 300 vs. 450 mm chemical mechanical planarization processes. / Jiao, Yubo; Liao, Xiaoyan; Wu, Changhong; Zhuang, Yun; Sampurno, Yasa; Philipossian, Ara; Theng, Siannie; Goldstein, Michael.

ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings. 2012. p. 272-277 6212910.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jiao, Y, Liao, X, Wu, C, Zhuang, Y, Sampurno, Y, Philipossian, A, Theng, S & Goldstein, M 2012, Tribological, thermal, and kinetic attributes of 300 vs. 450 mm chemical mechanical planarization processes. in ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings., 6212910, pp. 272-277, 2012 23rd Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2012, Saratoga Springs, NY, United States, 5/15/12. https://doi.org/10.1109/ASMC.2012.6212910
Jiao Y, Liao X, Wu C, Zhuang Y, Sampurno Y, Philipossian A et al. Tribological, thermal, and kinetic attributes of 300 vs. 450 mm chemical mechanical planarization processes. In ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings. 2012. p. 272-277. 6212910 https://doi.org/10.1109/ASMC.2012.6212910
Jiao, Yubo ; Liao, Xiaoyan ; Wu, Changhong ; Zhuang, Yun ; Sampurno, Yasa ; Philipossian, Ara ; Theng, Siannie ; Goldstein, Michael. / Tribological, thermal, and kinetic attributes of 300 vs. 450 mm chemical mechanical planarization processes. ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings. 2012. pp. 272-277
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