Tunable 670-nm DBR lasers

B. Pezeshki, J. S. Osinski, H. Zhao, A. Mathur, Thomas L Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A monolithically frequency-stabilized 670-nm laser diode was described. The device has good power output and efficiency and can be thermally tuned with current injected into the grating region. The gain material consisted of strained InGaP quantum wells. A grating layer was then grown in the first epitaxial step just above the waveguide and holographic lithography was used to define a second-order grating only in the regions used for the rear mirror. Narrow index-guided single mode devices were then fabricated with two separate contacts on both the grating and the gain regions. The turn-on voltage was below 2 volts and the series resistance was about 3.4 Ohms with linear current-voltage characteristics. The thermal time constant was 10-50 μs.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Editors Anon
PublisherIEEE
Pages337-338
Number of pages2
Volume11
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA
Duration: May 18 1997May 23 1997

Other

OtherProceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO
CityBaltimore, MD, USA
Period5/18/975/23/97

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Pezeshki, B., Osinski, J. S., Zhao, H., Mathur, A., & Koch, T. L. (1997). Tunable 670-nm DBR lasers. In Anon (Ed.), Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 11, pp. 337-338). IEEE.