Tunable 670-nm DBR lasers

B. Pezeshki, J. S. Osinski, H. Zhao, A. Mathur, T. L. Koch

Research output: Contribution to journalConference article

Abstract

A monolithically frequency-stabilized 670-nm laser diode was described. The device has good power output and efficiency and can be thermally tuned with current injected into the grating region. The gain material consisted of strained InGaP quantum wells. A grating layer was then grown in the first epitaxial step just above the waveguide and holographic lithography was used to define a second-order grating only in the regions used for the rear mirror. Narrow index-guided single mode devices were then fabricated with two separate contacts on both the grating and the gain regions. The turn-on voltage was below 2 volts and the series resistance was about 3.4 Ohms with linear current-voltage characteristics. The thermal time constant was 10-50 μs.

Original languageEnglish (US)
Pages (from-to)337-338
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume11
StatePublished - Jan 1 1997
Externally publishedYes
EventProceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA
Duration: May 18 1997May 23 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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