Tunable high-power AIGaAs distributed Bragg reflector laser diodes

V. N. Gulgazov, H. Zhao, D. Nam, J. S. Major, Thomas L Koch

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Power exceeding 200mW from high-power tunable distributed Bragg reflector (TDBR) lasers have been achieved. The low power consumption tuning mechanism is described, with a wavelength tuning of > 10nm. A 20000 h lifetest on DBR lasers is presented.

Original languageEnglish (US)
Pages (from-to)58-59
Number of pages2
JournalElectronics Letters
Volume33
Issue number1
StatePublished - Jan 2 1997
Externally publishedYes

Fingerprint

DBR lasers
High power lasers
Semiconductor lasers
Tuning
Electric power utilization
Wavelength

Keywords

  • Aluminium gallium arsenide
  • Distributed Bragg reflector lasers
  • Semiconductor junction lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Gulgazov, V. N., Zhao, H., Nam, D., Major, J. S., & Koch, T. L. (1997). Tunable high-power AIGaAs distributed Bragg reflector laser diodes. Electronics Letters, 33(1), 58-59.

Tunable high-power AIGaAs distributed Bragg reflector laser diodes. / Gulgazov, V. N.; Zhao, H.; Nam, D.; Major, J. S.; Koch, Thomas L.

In: Electronics Letters, Vol. 33, No. 1, 02.01.1997, p. 58-59.

Research output: Contribution to journalArticle

Gulgazov, VN, Zhao, H, Nam, D, Major, JS & Koch, TL 1997, 'Tunable high-power AIGaAs distributed Bragg reflector laser diodes', Electronics Letters, vol. 33, no. 1, pp. 58-59.
Gulgazov VN, Zhao H, Nam D, Major JS, Koch TL. Tunable high-power AIGaAs distributed Bragg reflector laser diodes. Electronics Letters. 1997 Jan 2;33(1):58-59.
Gulgazov, V. N. ; Zhao, H. ; Nam, D. ; Major, J. S. ; Koch, Thomas L. / Tunable high-power AIGaAs distributed Bragg reflector laser diodes. In: Electronics Letters. 1997 ; Vol. 33, No. 1. pp. 58-59.
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