Tunneling magnetoresistance in (001)-oriented FeCoMgOFeCo magnetic tunneling junctions grown by sputtering deposition

T. Moriyama, C. Ni, Weigang Wang, X. Zhang, John Q. Xiao

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Magnetic tunneling junctions (MTJs) with MgO tunnel barrier have been fabricated on both oriented and nonoriented buffer layers on Si(001) substrate by magnetron sputtering. FeCoMgOFeCo MTJs fabricated on oriented buffer layers show larger tunneling magnetoresistance (TMR) value up to 84% without high temperature postannealing, whereas those MTJs on nonoriented buffer layers show 45% of TMR. The high-resolution transmission electron microscopy images reveal an excellent morphology and very coherent crystal structure with FeCo (001) [110] MgO (001) [100] FeCo (001) [110] orientation. The results indicate that high TMR can be achieved without high temperature postannealing by sputtering deposition on appropriate oriented buffer layers.

Original languageEnglish (US)
Article number222503
JournalApplied Physics Letters
Volume88
Issue number22
DOIs
StatePublished - May 29 2006
Externally publishedYes

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sputtering
buffers
tunnels
magnetron sputtering
transmission electron microscopy
crystal structure
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Tunneling magnetoresistance in (001)-oriented FeCoMgOFeCo magnetic tunneling junctions grown by sputtering deposition. / Moriyama, T.; Ni, C.; Wang, Weigang; Zhang, X.; Xiao, John Q.

In: Applied Physics Letters, Vol. 88, No. 22, 222503, 29.05.2006.

Research output: Contribution to journalArticle

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