Type I-type II transition in InGaAs-GaNAs heterostructures

C. Schlichenmaier, H. Grüning, A. Thränhardt, P. J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, T. Meier, S. W. Koch, J. Hader, J. V. Moloney

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Abstract

Optical interband transitions in a series of In0.23 Ga0.77 As-Ga Nx As1-x quantum well samples are investigated. For changing nitrogen content, a type I-type II transition is identified by a detailed analysis of photoluminescence and photoreflectance spectra. Experimental results are compared systematically with spectra calculated by a microscopic theory. A valence band offset parameter of (1.5±0.5) eV is extracted for this heterostructure system.

Original languageEnglish (US)
Article number081903
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number8
DOIs
StatePublished - Feb 21 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Schlichenmaier, C., Grüning, H., Thränhardt, A., Klar, P. J., Kunert, B., Volz, K., Stolz, W., Heimbrodt, W., Meier, T., Koch, S. W., Hader, J., & Moloney, J. V. (2005). Type I-type II transition in InGaAs-GaNAs heterostructures. Applied Physics Letters, 86(8), 1-3. [081903]. https://doi.org/10.1063/1.1870132