Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μ m

C. Möller, C. Fuchs, C. Berger, A. Ruiz Perez, M. Koch, Jorg Hader, Jerome V Moloney, Stephan W Koch, W. Stolz

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Semiconductor laser characteristics based on type-II band-aligned quantum well heterostructures for the emission at 1.2 μm are presented. Ten "W"-quantum wells consisting of GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs are arranged as resonant periodic gain in a vertical-external-cavity surface-emitting laser. Its structure is analyzed by X-ray diffraction, photoluminescence, and reflectance measurements. The laser's power curves and spectra are investigated. Output powers at Watt level are achieved, with a maximum output power of 4 W. It is confirmed that laser operation only involves the type-II transition. A blue shift of the material gain is observed while the modal gain exhibits a red shift.

Original languageEnglish (US)
Article number071102
JournalApplied Physics Letters
Volume108
Issue number7
DOIs
StatePublished - Feb 15 2016
Externally publishedYes

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surface emitting lasers
cavities
output
quantum wells
blue shift
red shift
lasers
semiconductor lasers
reflectance
photoluminescence
curves
diffraction
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μ m. / Möller, C.; Fuchs, C.; Berger, C.; Ruiz Perez, A.; Koch, M.; Hader, Jorg; Moloney, Jerome V; Koch, Stephan W; Stolz, W.

In: Applied Physics Letters, Vol. 108, No. 7, 071102, 15.02.2016.

Research output: Contribution to journalArticle

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AU - Koch, M.

AU - Hader, Jorg

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AU - Koch, Stephan W

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