Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μ m

C. Möller, C. Fuchs, C. Berger, A. Ruiz Perez, M. Koch, Jorg Hader, Jerome V Moloney, Stephan W Koch, W. Stolz

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Semiconductor laser characteristics based on type-II band-aligned quantum well heterostructures for the emission at 1.2 μm are presented. Ten "W"-quantum wells consisting of GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs are arranged as resonant periodic gain in a vertical-external-cavity surface-emitting laser. Its structure is analyzed by X-ray diffraction, photoluminescence, and reflectance measurements. The laser's power curves and spectra are investigated. Output powers at Watt level are achieved, with a maximum output power of 4 W. It is confirmed that laser operation only involves the type-II transition. A blue shift of the material gain is observed while the modal gain exhibits a red shift.

Original languageEnglish (US)
Article number071102
JournalApplied Physics Letters
Volume108
Issue number7
DOIs
StatePublished - Feb 15 2016
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μ m'. Together they form a unique fingerprint.

  • Cite this