We explore the design space for optimizing CMOS compatible waveguide crossings on a silicon photonics platform. This paper presents simulated and experimental excess loss and crosstalk suppression data for vertically integrated silicon nitride over silicon-on-insulator waveguide crossings. Experimental results show crosstalk suppression exceeding -49/-44 dB with simulation results as low as -65/-60 dB for the TE/TM mode in a waveguide crossing with a 410 nm vertical gap.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics