Ultra-wideband source using gallium arsenide photoconductive semiconductor switches

Jon S H Schoenberg, Jeffrey W. Burger, J Scott Tyo, Michael D. Abdalla, Michael C. Skipper, Walter R. Buchwald

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

An ultrawide-band (UWB) pulse generator based on high-gain (lock-on mode) gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) is presented. Revised PCSS contact design shows improved performance in hold-off field, on-state switch potential, and switching jitter, while reducing the switch volume by 75% compared to previous designs. A compact laser diode module operates at 904 nm and triggers the PCSS at pulse repetition rates (PRR) of up to 2 kHz. The 625 W laser diode output power is found to be sufficient to produce switching jitter of 65 ps rms at a switched field of 80 kV/cm. The PCSS switching jitter is found to have a strong dependence upon the switched field when triggered with the laser diode module. The revised PCSS geometry is easily integrated into a compact, parallel-plate source used to drive a TEM horn impulse-radiating antenna (IRA). The radiated field has a rise time of 330 ps and an adjustable low-frequency spectrum.

Original languageEnglish (US)
Pages (from-to)327-334
Number of pages8
JournalIEEE Transactions on Plasma Science
Volume25
Issue number2
DOIs
StatePublished - 1997
Externally publishedYes

Fingerprint

gallium
switches
broadband
semiconductor lasers
vibration
modules
pulse generators
pulse repetition rate
high gain
parallel plates
impulses
antennas
actuators
low frequencies
transmission electron microscopy
output
geometry

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Condensed Matter Physics

Cite this

Schoenberg, J. S. H., Burger, J. W., Tyo, J. S., Abdalla, M. D., Skipper, M. C., & Buchwald, W. R. (1997). Ultra-wideband source using gallium arsenide photoconductive semiconductor switches. IEEE Transactions on Plasma Science, 25(2), 327-334. https://doi.org/10.1109/27.602507

Ultra-wideband source using gallium arsenide photoconductive semiconductor switches. / Schoenberg, Jon S H; Burger, Jeffrey W.; Tyo, J Scott; Abdalla, Michael D.; Skipper, Michael C.; Buchwald, Walter R.

In: IEEE Transactions on Plasma Science, Vol. 25, No. 2, 1997, p. 327-334.

Research output: Contribution to journalArticle

Schoenberg, JSH, Burger, JW, Tyo, JS, Abdalla, MD, Skipper, MC & Buchwald, WR 1997, 'Ultra-wideband source using gallium arsenide photoconductive semiconductor switches', IEEE Transactions on Plasma Science, vol. 25, no. 2, pp. 327-334. https://doi.org/10.1109/27.602507
Schoenberg, Jon S H ; Burger, Jeffrey W. ; Tyo, J Scott ; Abdalla, Michael D. ; Skipper, Michael C. ; Buchwald, Walter R. / Ultra-wideband source using gallium arsenide photoconductive semiconductor switches. In: IEEE Transactions on Plasma Science. 1997 ; Vol. 25, No. 2. pp. 327-334.
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