Ultrafast characterization of semiconductor gain and absorber devices for mode-locked VECSELs

Caleb Baker, Maik Scheller, Hwang Jye Yang, Stephan W. Koch, Ronald J. Jones, Jerome V. Moloney, Antje Ruiz Perez, Wolfgang Stolz, Sadhvikas Addamane, Ganesh Balakrishnan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a comprehensive characterization of semiconductor gain and absorber devices utilizing novel measurement techniques. Using a 20fs probe laser, a time resolution in the few femtosecond range is achieved in traditional pump and probe measurements performed on VECSELs and SESAMs. In-situ characterizations of VECSEL samples mode-locked in the sub-500fs regime reveal the fast and longtime recoveries of the gain present in real lasing conditions. Spectrally-resolved probing gives further information about the properties of carriers in VECSEL gain media. Our results indicate that stable mode-locked operation is sustained by multiple carrier relaxation mechanisms ranging from a few femtoseconds to the pico- and nanosecond regimes.

Original languageEnglish (US)
Title of host publicationVertical External Cavity Surface Emitting Lasers (VECSELs) VI
EditorsKeith G. Wilcox
PublisherSPIE
ISBN (Electronic)9781628419696
DOIs
StatePublished - 2016
EventVertical External Cavity Surface Emitting Lasers (VECSELs) VI - San Francisco, United States
Duration: Feb 15 2016Feb 16 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9734
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherVertical External Cavity Surface Emitting Lasers (VECSELs) VI
CountryUnited States
CitySan Francisco
Period2/15/162/16/16

Keywords

  • Modelocked
  • SESAM
  • VECSEL
  • ultrafast

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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