Ultrafast electron and hole tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells

S. Ten, M. F. Krol, P. T. Guerreiro, Nasser N Peyghambarian

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We present unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Holes generated near the band edge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of more than three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wave functions by band mixing in the valence band.

Original languageEnglish (US)
Pages (from-to)3387-3389
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number22
StatePublished - Nov 25 1996

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electron tunneling
quantum wells
tunnels
wave functions
valence
momentum
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ultrafast electron and hole tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells. / Ten, S.; Krol, M. F.; Guerreiro, P. T.; Peyghambarian, Nasser N.

In: Applied Physics Letters, Vol. 69, No. 22, 25.11.1996, p. 3387-3389.

Research output: Contribution to journalArticle

@article{1e7358f2126b4b429d8e1628f54de20e,
title = "Ultrafast electron and hole tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells",
abstract = "We present unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Holes generated near the band edge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of more than three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wave functions by band mixing in the valence band.",
author = "S. Ten and Krol, {M. F.} and Guerreiro, {P. T.} and Peyghambarian, {Nasser N}",
year = "1996",
month = "11",
day = "25",
language = "English (US)",
volume = "69",
pages = "3387--3389",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

TY - JOUR

T1 - Ultrafast electron and hole tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells

AU - Ten, S.

AU - Krol, M. F.

AU - Guerreiro, P. T.

AU - Peyghambarian, Nasser N

PY - 1996/11/25

Y1 - 1996/11/25

N2 - We present unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Holes generated near the band edge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of more than three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wave functions by band mixing in the valence band.

AB - We present unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Holes generated near the band edge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of more than three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wave functions by band mixing in the valence band.

UR - http://www.scopus.com/inward/record.url?scp=0343562332&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343562332&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0343562332

VL - 69

SP - 3387

EP - 3389

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -