Ultrafast electron and hole tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells

S. Ten; M. F. Krol; P. T. Guerreiro; N. Peyghambarian

doi:10.1063/1.117268

Ultrafast electron and hole tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells

S. Ten, M. F. Krol, P. T. Guerreiro, N. Peyghambarian

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We present unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Holes generated near the band edge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of more than three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wave functions by band mixing in the valence band.

Original language	English (US)
Pages (from-to)	3387-3389
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	22
DOIs	https://doi.org/10.1063/1.117268
State	Published - Nov 25 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.117268

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abstract = "We present unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Holes generated near the band edge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of more than three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wave functions by band mixing in the valence band.",

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year = "1996",

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AU - Ten, S.

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AU - Guerreiro, P. T.

AU - Peyghambarian, N.

PY - 1996/11/25

Y1 - 1996/11/25

N2 - We present unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Holes generated near the band edge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of more than three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wave functions by band mixing in the valence band.

AB - We present unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Holes generated near the band edge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of more than three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wave functions by band mixing in the valence band.

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Ultrafast electron and hole tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells

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