Abstract
We present unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Holes generated near the band edge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of more than three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wave functions by band mixing in the valence band.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3387-3389 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 69 |
| Issue number | 22 |
| DOIs | |
| State | Published - Nov 25 1996 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Ten, S., Krol, M. F., Guerreiro, P. T., & Peyghambarian, N. (1996). Ultrafast electron and hole tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Applied Physics Letters, 69(22), 3387-3389. https://doi.org/10.1063/1.117268