Abstract
We present unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Holes generated near the band edge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of more than three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wave functions by band mixing in the valence band.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3387-3389 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 69 |
| Issue number | 22 |
| State | Published - Nov 25 1996 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Ultrafast electron and hole tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells. / Ten, S.; Krol, M. F.; Guerreiro, P. T.; Peyghambarian, Nasser N.
In: Applied Physics Letters, Vol. 69, No. 22, 25.11.1996, p. 3387-3389.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Ultrafast electron and hole tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells
AU - Ten, S.
AU - Krol, M. F.
AU - Guerreiro, P. T.
AU - Peyghambarian, Nasser N
PY - 1996/11/25
Y1 - 1996/11/25
N2 - We present unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Holes generated near the band edge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of more than three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wave functions by band mixing in the valence band.
AB - We present unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Holes generated near the band edge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of more than three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wave functions by band mixing in the valence band.
UR - http://www.scopus.com/inward/record.url?scp=0343562332&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0343562332&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0343562332
VL - 69
SP - 3387
EP - 3389
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 22
ER -