Ultrafast excitonic room temperature nonlinearity in neutron irradiated quantum wells

S. Ten, J. G. Williams, P. T. Guerreiro, G. Khitrova, N. Peyghambarian

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Sharp room temperature exciton features and complete recovery of the excitonic absorption with 21 ps time constant are demonstrated in neutron irradiated (Ga,Al)As/GaAs multiple quantum wells. Carrier lifetime reduction is consistent with the EL2 midgap defect which is efficiently generated by fast neutrons. Influence of gamma rays accompanying neutron irradiation is discussed. Neutron irradiation provides a straightforward way to control carrier lifetime in semiconductor heterostructures with minor deterioration of their excitonic properties.

Original languageEnglish (US)
Pages (from-to)158-160
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number2
DOIs
StatePublished - Jan 13 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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