Ultrafast intensity switching and nonthermal carrier effects in semiconductor microcavity lasers

Frank Jahnke, Stephan W Koch

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The transient response of a running semiconductor microcavity laser on ultrashort optical pulses is theoretically investigated. The results reflect the fain recovery under the influence of a nonequilibrium electron-hole plasma. The carrier dynamics is described by a quantum Boltzmann equation for the momentum dependent electron and hole occupation probabilities.

Original languageEnglish (US)
Pages (from-to)2278-2280
Number of pages3
JournalApplied Physics Letters
Volume67
Issue number16
DOIs
StatePublished - Jan 1 1995
Externally publishedYes

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semiconductor lasers
transient response
occupation
recovery
momentum
pulses
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ultrafast intensity switching and nonthermal carrier effects in semiconductor microcavity lasers. / Jahnke, Frank; Koch, Stephan W.

In: Applied Physics Letters, Vol. 67, No. 16, 01.01.1995, p. 2278-2280.

Research output: Contribution to journalArticle

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