Ultrafast magnetophotoconductivity of semi-insulating gallium arsenide

R. H. Moyer, P. Agmon, Thomas L Koch, A. Yariv

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The speed of opto-electronic switches is increased or decreased by the application of a magnetic field. This is achieved by inducing a carrier drift toward or away from the semiconductor surface, resulting in the enhancement or suppression of surface recombination. We establish that surface recombination plays a major role in determining the speed of the opto-electronic switch.

Original languageEnglish (US)
Pages (from-to)266-268
Number of pages3
JournalApplied Physics Letters
Volume39
Issue number3
DOIs
StatePublished - 1981
Externally publishedYes

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gallium
switching circuits
retarding
augmentation
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ultrafast magnetophotoconductivity of semi-insulating gallium arsenide. / Moyer, R. H.; Agmon, P.; Koch, Thomas L; Yariv, A.

In: Applied Physics Letters, Vol. 39, No. 3, 1981, p. 266-268.

Research output: Contribution to journalArticle

Moyer, R. H. ; Agmon, P. ; Koch, Thomas L ; Yariv, A. / Ultrafast magnetophotoconductivity of semi-insulating gallium arsenide. In: Applied Physics Letters. 1981 ; Vol. 39, No. 3. pp. 266-268.
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