Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses

J. L. Tomaino, A. D. Jameson, Yun Shik Lee, J. P. Prineas, J. T. Steiner, M. Kira, Stephan W Koch

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Intraexciton transitions in semiconductor quantum wells are modulated by strong and tunable few-cycle terahertz pulses. Time-resolved terahertz-pump and optical-probe measurements demonstrate that the 1s heavy-hole and light-hole exciton resonances undergo large-amplitude spectral modulations when the terahertz radiation is tuned near the 1s-2p intraexciton transition. The strong nonlinear optical transients exhibit the characteristics of Rabi sidebands. The spectral features also reveal the dephasing properties of the optically dark 2p states. A microscopic theory shows that the 2p-dephasing rate is three times that of the 1s-state. The ultrafast nonlinear optical effects and their quantum nature suggest promising applications to ultrahigh-speed optical signal processing and quantum information processing in the THz region.

Original languageEnglish (US)
Pages (from-to)1125-1129
Number of pages5
JournalSolid-State Electronics
Volume54
Issue number10
DOIs
StatePublished - Oct 2010
Externally publishedYes

Fingerprint

Optical signal processing
Excitons
Semiconductor quantum wells
Modulation
quantum wells
Pumps
Radiation
cycles
pulses
sidebands
optical communication
signal processing
excitons
pumps
modulation
probes
radiation
LDS 751

Keywords

  • Exciton
  • Few-cycle terahertz pulse
  • Nonlinear terahertz effect
  • Quantum well
  • Rabi sideband

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses. / Tomaino, J. L.; Jameson, A. D.; Lee, Yun Shik; Prineas, J. P.; Steiner, J. T.; Kira, M.; Koch, Stephan W.

In: Solid-State Electronics, Vol. 54, No. 10, 10.2010, p. 1125-1129.

Research output: Contribution to journalArticle

Tomaino, J. L. ; Jameson, A. D. ; Lee, Yun Shik ; Prineas, J. P. ; Steiner, J. T. ; Kira, M. ; Koch, Stephan W. / Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses. In: Solid-State Electronics. 2010 ; Vol. 54, No. 10. pp. 1125-1129.
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AU - Tomaino, J. L.

AU - Jameson, A. D.

AU - Lee, Yun Shik

AU - Prineas, J. P.

AU - Steiner, J. T.

AU - Kira, M.

AU - Koch, Stephan W

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AB - Intraexciton transitions in semiconductor quantum wells are modulated by strong and tunable few-cycle terahertz pulses. Time-resolved terahertz-pump and optical-probe measurements demonstrate that the 1s heavy-hole and light-hole exciton resonances undergo large-amplitude spectral modulations when the terahertz radiation is tuned near the 1s-2p intraexciton transition. The strong nonlinear optical transients exhibit the characteristics of Rabi sidebands. The spectral features also reveal the dephasing properties of the optically dark 2p states. A microscopic theory shows that the 2p-dephasing rate is three times that of the 1s-state. The ultrafast nonlinear optical effects and their quantum nature suggest promising applications to ultrahigh-speed optical signal processing and quantum information processing in the THz region.

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KW - Rabi sideband

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