Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses

J. L. Tomaino, A. D. Jameson, Yun Shik Lee, J. P. Prineas, J. T. Steiner, M. Kira, S. W. Koch

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Intraexciton transitions in semiconductor quantum wells are modulated by strong and tunable few-cycle terahertz pulses. Time-resolved terahertz-pump and optical-probe measurements demonstrate that the 1s heavy-hole and light-hole exciton resonances undergo large-amplitude spectral modulations when the terahertz radiation is tuned near the 1s-2p intraexciton transition. The strong nonlinear optical transients exhibit the characteristics of Rabi sidebands. The spectral features also reveal the dephasing properties of the optically dark 2p states. A microscopic theory shows that the 2p-dephasing rate is three times that of the 1s-state. The ultrafast nonlinear optical effects and their quantum nature suggest promising applications to ultrahigh-speed optical signal processing and quantum information processing in the THz region.

Original languageEnglish (US)
Pages (from-to)1125-1129
Number of pages5
JournalSolid-State Electronics
Volume54
Issue number10
DOIs
StatePublished - Oct 1 2010

Keywords

  • Exciton
  • Few-cycle terahertz pulse
  • Nonlinear terahertz effect
  • Quantum well
  • Rabi sideband

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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