Abstract
Femtosecond time-resolved pump-probe spectroscopy is used to investigate the ultrafast carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate. Pronounced nonequilibrium effects in the relaxation dynamics of the optically injected carrier distributions are observed and analyzed using a microscopic many-body theory. Transient population inversion and optical gain is obtained on a femtosecond time scale for excitation at energies slightly above the lowest direct quantum-well transition.
| Original language | English (US) |
|---|---|
| Article number | 201306 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 79 |
| Issue number | 20 |
| DOIs | |
| State | Published - May 1 2009 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Lange, C., Köster, N. S., Chatterjee, S., Sigg, H., Chrastina, D., Isella, G., Von Känel, H., Schäfer, M., Kira, M., & Koch, S. W. (2009). Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion. Physical Review B - Condensed Matter and Materials Physics, 79(20), [201306]. https://doi.org/10.1103/PhysRevB.79.201306