Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion

C. Lange, N. S. Köster, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. Von Känel, M. Schäfer, M. Kira, Stephan W Koch

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

Femtosecond time-resolved pump-probe spectroscopy is used to investigate the ultrafast carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate. Pronounced nonequilibrium effects in the relaxation dynamics of the optically injected carrier distributions are observed and analyzed using a microscopic many-body theory. Transient population inversion and optical gain is obtained on a femtosecond time scale for excitation at energies slightly above the lowest direct quantum-well transition.

Original languageEnglish (US)
Article number201306
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number20
DOIs
StatePublished - May 1 2009
Externally publishedYes

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population inversion
Semiconductor quantum wells
quantum wells
Optical gain
Pumps
Spectroscopy
pumps
probes
Substrates
spectroscopy
excitation
energy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells : Evidence for a femtosecond transient population inversion. / Lange, C.; Köster, N. S.; Chatterjee, S.; Sigg, H.; Chrastina, D.; Isella, G.; Von Känel, H.; Schäfer, M.; Kira, M.; Koch, Stephan W.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 79, No. 20, 201306, 01.05.2009.

Research output: Contribution to journalArticle

Lange, C. ; Köster, N. S. ; Chatterjee, S. ; Sigg, H. ; Chrastina, D. ; Isella, G. ; Von Känel, H. ; Schäfer, M. ; Kira, M. ; Koch, Stephan W. / Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells : Evidence for a femtosecond transient population inversion. In: Physical Review B - Condensed Matter and Materials Physics. 2009 ; Vol. 79, No. 20.
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