Abstract
Femtosecond time-resolved pump-probe spectroscopy is used to investigate the ultrafast carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate. Pronounced nonequilibrium effects in the relaxation dynamics of the optically injected carrier distributions are observed and analyzed using a microscopic many-body theory. Transient population inversion and optical gain is obtained on a femtosecond time scale for excitation at energies slightly above the lowest direct quantum-well transition.
| Original language | English (US) |
|---|---|
| Article number | 201306 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 79 |
| Issue number | 20 |
| DOIs | |
| State | Published - May 1 2009 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells : Evidence for a femtosecond transient population inversion. / Lange, C.; Köster, N. S.; Chatterjee, S.; Sigg, H.; Chrastina, D.; Isella, G.; Von Känel, H.; Schäfer, M.; Kira, M.; Koch, Stephan W.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 79, No. 20, 201306, 01.05.2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells
T2 - Evidence for a femtosecond transient population inversion
AU - Lange, C.
AU - Köster, N. S.
AU - Chatterjee, S.
AU - Sigg, H.
AU - Chrastina, D.
AU - Isella, G.
AU - Von Känel, H.
AU - Schäfer, M.
AU - Kira, M.
AU - Koch, Stephan W
PY - 2009/5/1
Y1 - 2009/5/1
N2 - Femtosecond time-resolved pump-probe spectroscopy is used to investigate the ultrafast carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate. Pronounced nonequilibrium effects in the relaxation dynamics of the optically injected carrier distributions are observed and analyzed using a microscopic many-body theory. Transient population inversion and optical gain is obtained on a femtosecond time scale for excitation at energies slightly above the lowest direct quantum-well transition.
AB - Femtosecond time-resolved pump-probe spectroscopy is used to investigate the ultrafast carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate. Pronounced nonequilibrium effects in the relaxation dynamics of the optically injected carrier distributions are observed and analyzed using a microscopic many-body theory. Transient population inversion and optical gain is obtained on a femtosecond time scale for excitation at energies slightly above the lowest direct quantum-well transition.
UR - http://www.scopus.com/inward/record.url?scp=67449093612&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=67449093612&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.79.201306
DO - 10.1103/PhysRevB.79.201306
M3 - Article
AN - SCOPUS:67449093612
VL - 79
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 20
M1 - 201306
ER -