Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion

C. Lange, N. S. Köster, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. Von Känel, M. Schäfer, M. Kira, S. W. Koch

Research output: Contribution to journalArticle

80 Scopus citations

Abstract

Femtosecond time-resolved pump-probe spectroscopy is used to investigate the ultrafast carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate. Pronounced nonequilibrium effects in the relaxation dynamics of the optically injected carrier distributions are observed and analyzed using a microscopic many-body theory. Transient population inversion and optical gain is obtained on a femtosecond time scale for excitation at energies slightly above the lowest direct quantum-well transition.

Original languageEnglish (US)
Article number201306
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number20
DOIs
StatePublished - May 1 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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