Ultrafast optical response and transient population inversion of photoexcited Ge/SiGe quantum wells

S. Chatterjee, C. Lange, N. S. Köster, M. Schäfer, M. Kira, S. W. Koch, D. Chrastina, G. Isella, H. Von Känel, H. Sigg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The ultrafast carrier dynamics of Ge/SiGe quantum wells on Si substrate are investigated by pump-probe spectroscopy. Pronounced nonequilibrium effects in the relaxation dynamics and transient gain are observed and analyzed using a microscopic many-body theory.

Original languageEnglish (US)
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication2010 Laser Science to Photonic Applications, CLEO/QELS 2010
StatePublished - Oct 11 2010
EventLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Publication series

NameLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Other

OtherLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
CountryUnited States
CitySan Jose, CA
Period5/16/105/21/10

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Cite this

Chatterjee, S., Lange, C., Köster, N. S., Schäfer, M., Kira, M., Koch, S. W., Chrastina, D., Isella, G., Von Känel, H., & Sigg, H. (2010). Ultrafast optical response and transient population inversion of photoexcited Ge/SiGe quantum wells. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 [5499667] (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010).