Ultrafast relaxation of hot phonons in graphene-hBN heterostructures

Dheeraj Golla, Alexandra Brasington, Brian J Leroy, Arvinder Singh Sandhu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Fast carrier cooling is important for high power graphene based devices. Strongly coupled optical phonons play a major role in the relaxation of photoexcited carriers in graphene. Heterostructures of graphene and hexagonal boron nitride (hBN) have shown exceptional mobility and high saturation current, which makes them ideal for applications, but the effect of the hBN substrate on carrier cooling mechanisms is not understood. We track the cooling of hot photo-excited carriers in graphene-hBN heterostructures using ultrafast pump-probe spectroscopy. We find that the carriers cool down four times faster in the case of graphene on hBN than on a silicon oxide substrate thus overcoming the hot phonon bottleneck that plagues cooling in graphene devices.

Original languageEnglish (US)
Article number056101
JournalAPL Materials
Volume5
Issue number5
DOIs
StatePublished - May 1 2017

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Graphite
Boron nitride
Phonons
Graphene
Heterojunctions
Cooling
Silicon oxides
Substrates
boron nitride
Pumps
Spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Cite this

Ultrafast relaxation of hot phonons in graphene-hBN heterostructures. / Golla, Dheeraj; Brasington, Alexandra; Leroy, Brian J; Sandhu, Arvinder Singh.

In: APL Materials, Vol. 5, No. 5, 056101, 01.05.2017.

Research output: Contribution to journalArticle

@article{4128c0082dc7404d9a839b76e8ffa816,
title = "Ultrafast relaxation of hot phonons in graphene-hBN heterostructures",
abstract = "Fast carrier cooling is important for high power graphene based devices. Strongly coupled optical phonons play a major role in the relaxation of photoexcited carriers in graphene. Heterostructures of graphene and hexagonal boron nitride (hBN) have shown exceptional mobility and high saturation current, which makes them ideal for applications, but the effect of the hBN substrate on carrier cooling mechanisms is not understood. We track the cooling of hot photo-excited carriers in graphene-hBN heterostructures using ultrafast pump-probe spectroscopy. We find that the carriers cool down four times faster in the case of graphene on hBN than on a silicon oxide substrate thus overcoming the hot phonon bottleneck that plagues cooling in graphene devices.",
author = "Dheeraj Golla and Alexandra Brasington and Leroy, {Brian J} and Sandhu, {Arvinder Singh}",
year = "2017",
month = "5",
day = "1",
doi = "10.1063/1.4982738",
language = "English (US)",
volume = "5",
journal = "APL Materials",
issn = "2166-532X",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Ultrafast relaxation of hot phonons in graphene-hBN heterostructures

AU - Golla, Dheeraj

AU - Brasington, Alexandra

AU - Leroy, Brian J

AU - Sandhu, Arvinder Singh

PY - 2017/5/1

Y1 - 2017/5/1

N2 - Fast carrier cooling is important for high power graphene based devices. Strongly coupled optical phonons play a major role in the relaxation of photoexcited carriers in graphene. Heterostructures of graphene and hexagonal boron nitride (hBN) have shown exceptional mobility and high saturation current, which makes them ideal for applications, but the effect of the hBN substrate on carrier cooling mechanisms is not understood. We track the cooling of hot photo-excited carriers in graphene-hBN heterostructures using ultrafast pump-probe spectroscopy. We find that the carriers cool down four times faster in the case of graphene on hBN than on a silicon oxide substrate thus overcoming the hot phonon bottleneck that plagues cooling in graphene devices.

AB - Fast carrier cooling is important for high power graphene based devices. Strongly coupled optical phonons play a major role in the relaxation of photoexcited carriers in graphene. Heterostructures of graphene and hexagonal boron nitride (hBN) have shown exceptional mobility and high saturation current, which makes them ideal for applications, but the effect of the hBN substrate on carrier cooling mechanisms is not understood. We track the cooling of hot photo-excited carriers in graphene-hBN heterostructures using ultrafast pump-probe spectroscopy. We find that the carriers cool down four times faster in the case of graphene on hBN than on a silicon oxide substrate thus overcoming the hot phonon bottleneck that plagues cooling in graphene devices.

UR - http://www.scopus.com/inward/record.url?scp=85019058561&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019058561&partnerID=8YFLogxK

U2 - 10.1063/1.4982738

DO - 10.1063/1.4982738

M3 - Article

AN - SCOPUS:85019058561

VL - 5

JO - APL Materials

JF - APL Materials

SN - 2166-532X

IS - 5

M1 - 056101

ER -