Ultrafast terahertz response of optically excited semiconductor heterostructures

D. Golde, M. Kira, S. W. Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A microscopic theory for the terahertz response of a semiconductor quantum well under coherent conditions is presented. It is shown that excitonic effects influence the intersubband absorption under certain conditions. For high-quality samples, one should be able to resolve both band-to-band and excitonic intersubband transitions in an terahertz absorption measurement. Due to the competition of intersubband transitions and classical field-induced carrier accelerations, an unexpected Fano feature is observed in the terahertz spectra. This result is in excellent agreement with recent measurements.

Original languageEnglish (US)
Title of host publicationUltrafast Phenomena in Semiconductors and Nanostructure Materials XIV
DOIs
StatePublished - May 3 2010
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials XIV - San Francisco, CA, United States
Duration: Jan 24 2010Jan 27 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7600
ISSN (Print)0277-786X

Other

OtherUltrafast Phenomena in Semiconductors and Nanostructure Materials XIV
CountryUnited States
CitySan Francisco, CA
Period1/24/101/27/10

Keywords

  • Fano resonance
  • Intersubband transitions
  • Quantum wells
  • THz response

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Golde, D., Kira, M., & Koch, S. W. (2010). Ultrafast terahertz response of optically excited semiconductor heterostructures. In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV [76000F] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7600). https://doi.org/10.1117/12.839460