Ultrafast terahertz response of optically excited semiconductor heterostructures

D. Golde, M. Kira, Stephan W Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A microscopic theory for the terahertz response of a semiconductor quantum well under coherent conditions is presented. It is shown that excitonic effects influence the intersubband absorption under certain conditions. For high-quality samples, one should be able to resolve both band-to-band and excitonic intersubband transitions in an terahertz absorption measurement. Due to the competition of intersubband transitions and classical field-induced carrier accelerations, an unexpected Fano feature is observed in the terahertz spectra. This result is in excellent agreement with recent measurements.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7600
DOIs
StatePublished - 2010
Externally publishedYes
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials XIV - San Francisco, CA, United States
Duration: Jan 24 2010Jan 27 2010

Other

OtherUltrafast Phenomena in Semiconductors and Nanostructure Materials XIV
CountryUnited States
CitySan Francisco, CA
Period1/24/101/27/10

Fingerprint

Heterostructures
Heterojunctions
Semiconductors
Semiconductor materials
Absorption
Semiconductor quantum wells
quantum wells
Quantum Well
Resolve

Keywords

  • Fano resonance
  • Intersubband transitions
  • Quantum wells
  • THz response

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Golde, D., Kira, M., & Koch, S. W. (2010). Ultrafast terahertz response of optically excited semiconductor heterostructures. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7600). [76000F] https://doi.org/10.1117/12.839460

Ultrafast terahertz response of optically excited semiconductor heterostructures. / Golde, D.; Kira, M.; Koch, Stephan W.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7600 2010. 76000F.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Golde, D, Kira, M & Koch, SW 2010, Ultrafast terahertz response of optically excited semiconductor heterostructures. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7600, 76000F, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, San Francisco, CA, United States, 1/24/10. https://doi.org/10.1117/12.839460
Golde D, Kira M, Koch SW. Ultrafast terahertz response of optically excited semiconductor heterostructures. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7600. 2010. 76000F https://doi.org/10.1117/12.839460
Golde, D. ; Kira, M. ; Koch, Stephan W. / Ultrafast terahertz response of optically excited semiconductor heterostructures. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7600 2010.
@inproceedings{367da3a24d11401f8e2b6734a4687252,
title = "Ultrafast terahertz response of optically excited semiconductor heterostructures",
abstract = "A microscopic theory for the terahertz response of a semiconductor quantum well under coherent conditions is presented. It is shown that excitonic effects influence the intersubband absorption under certain conditions. For high-quality samples, one should be able to resolve both band-to-band and excitonic intersubband transitions in an terahertz absorption measurement. Due to the competition of intersubband transitions and classical field-induced carrier accelerations, an unexpected Fano feature is observed in the terahertz spectra. This result is in excellent agreement with recent measurements.",
keywords = "Fano resonance, Intersubband transitions, Quantum wells, THz response",
author = "D. Golde and M. Kira and Koch, {Stephan W}",
year = "2010",
doi = "10.1117/12.839460",
language = "English (US)",
isbn = "9780819479969",
volume = "7600",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Ultrafast terahertz response of optically excited semiconductor heterostructures

AU - Golde, D.

AU - Kira, M.

AU - Koch, Stephan W

PY - 2010

Y1 - 2010

N2 - A microscopic theory for the terahertz response of a semiconductor quantum well under coherent conditions is presented. It is shown that excitonic effects influence the intersubband absorption under certain conditions. For high-quality samples, one should be able to resolve both band-to-band and excitonic intersubband transitions in an terahertz absorption measurement. Due to the competition of intersubband transitions and classical field-induced carrier accelerations, an unexpected Fano feature is observed in the terahertz spectra. This result is in excellent agreement with recent measurements.

AB - A microscopic theory for the terahertz response of a semiconductor quantum well under coherent conditions is presented. It is shown that excitonic effects influence the intersubband absorption under certain conditions. For high-quality samples, one should be able to resolve both band-to-band and excitonic intersubband transitions in an terahertz absorption measurement. Due to the competition of intersubband transitions and classical field-induced carrier accelerations, an unexpected Fano feature is observed in the terahertz spectra. This result is in excellent agreement with recent measurements.

KW - Fano resonance

KW - Intersubband transitions

KW - Quantum wells

KW - THz response

UR - http://www.scopus.com/inward/record.url?scp=77951518372&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951518372&partnerID=8YFLogxK

U2 - 10.1117/12.839460

DO - 10.1117/12.839460

M3 - Conference contribution

SN - 9780819479969

VL - 7600

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -