Ultrafast transient gain in Ge/SiGe quantum wells

N. S. Köster; C. Lange; K. Kolata; S. Chatterjee; D. Chrastina; G. Isella; H. von Känel; H. Sigg; M. Schäfer; M. Kira; S. W. Koch

doi:10.1002/pssc.201000857

Ultrafast transient gain in Ge/SiGe quantum wells

N. S. Köster, C. Lange, K. Kolata, S. Chatterjee, D. Chrastina, G. Isella, H. von Känel, H. Sigg, M. Schäfer, M. Kira, S. W. Koch

Optical Sciences, College of

Research output: Contribution to journal › Article

2 Scopus citations

Abstract

The ultrafast carrier dynamics of Ge/SiGe quantum wells on Si substrate is investigated by pump-probe spectroscopy. Spectrally tunable 80 fs pulses emitted by an opto-parametric amplifier are used to excite the sample and a white-light supercontinuum generated from a 1 kHz Ti:sapphire regenerative amplifier system is used to probe the sample transmission. Pronounced nonequilibrium effects are observed in the relaxation dynamics. The pump energy dependence of these effects is discussed. If the sample is excited under close-to-resonant pumping conditions, transient gain is observed. The findings are explained using a microscopic many-body theory.

Original language	English (US)
Pages (from-to)	1109-1112
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	8
Issue number	4
DOIs	https://doi.org/10.1002/pssc.201000857
State	Published - Apr 1 2011

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Keywords

Carrier dynamics
Gain
Germanium
Pump-probe

ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Köster, N. S., Lange, C., Kolata, K., Chatterjee, S., Chrastina, D., Isella, G., von Känel, H., Sigg, H., Schäfer, M., Kira, M., & Koch, S. W. (2011). Ultrafast transient gain in Ge/SiGe quantum wells. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(4), 1109-1112. https://doi.org/10.1002/pssc.201000857

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abstract = "The ultrafast carrier dynamics of Ge/SiGe quantum wells on Si substrate is investigated by pump-probe spectroscopy. Spectrally tunable 80 fs pulses emitted by an opto-parametric amplifier are used to excite the sample and a white-light supercontinuum generated from a 1 kHz Ti:sapphire regenerative amplifier system is used to probe the sample transmission. Pronounced nonequilibrium effects are observed in the relaxation dynamics. The pump energy dependence of these effects is discussed. If the sample is excited under close-to-resonant pumping conditions, transient gain is observed. The findings are explained using a microscopic many-body theory.",

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AU - Köster, N. S.

AU - Lange, C.

AU - Kolata, K.

AU - Chatterjee, S.

AU - Chrastina, D.

AU - Isella, G.

AU - von Känel, H.

AU - Sigg, H.

AU - Schäfer, M.

AU - Kira, M.

AU - Koch, S. W.

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N2 - The ultrafast carrier dynamics of Ge/SiGe quantum wells on Si substrate is investigated by pump-probe spectroscopy. Spectrally tunable 80 fs pulses emitted by an opto-parametric amplifier are used to excite the sample and a white-light supercontinuum generated from a 1 kHz Ti:sapphire regenerative amplifier system is used to probe the sample transmission. Pronounced nonequilibrium effects are observed in the relaxation dynamics. The pump energy dependence of these effects is discussed. If the sample is excited under close-to-resonant pumping conditions, transient gain is observed. The findings are explained using a microscopic many-body theory.

AB - The ultrafast carrier dynamics of Ge/SiGe quantum wells on Si substrate is investigated by pump-probe spectroscopy. Spectrally tunable 80 fs pulses emitted by an opto-parametric amplifier are used to excite the sample and a white-light supercontinuum generated from a 1 kHz Ti:sapphire regenerative amplifier system is used to probe the sample transmission. Pronounced nonequilibrium effects are observed in the relaxation dynamics. The pump energy dependence of these effects is discussed. If the sample is excited under close-to-resonant pumping conditions, transient gain is observed. The findings are explained using a microscopic many-body theory.

KW - Carrier dynamics

KW - Gain

KW - Germanium

KW - Pump-probe

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Access to Document

10.1002/pssc.201000857