Gain for less than one picosecond is observed in a type II GaAs/AlAs multiple quantum well and compared to a type I multiple quantum well under the same conditions. A sophisticated three-beam experiment is used to unambiguously determine the internal gain of the samples. This method is capable of measuring very small amounts of gain and applicable to a wide variety of situations. The observations are well explained by a simple carrier scattering model.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)