Ultrafast transient gain in type II multiple quantum wells

G. Mohs, B. Fluegel, H. Giessen, K. Meissner, Galina Khitrova, H. Gibbs, Nasser N Peyghambarian

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Abstract

Gain for less than one picosecond is observed in a type II GaAs/AlAs multiple quantum well and compared to a type I multiple quantum well under the same conditions. A sophisticated three-beam experiment is used to unambiguously determine the internal gain of the samples. This method is capable of measuring very small amounts of gain and applicable to a wide variety of situations. The observations are well explained by a simple carrier scattering model.

Original languageEnglish (US)
Pages (from-to)511
Number of pages1
JournalApplied Physics Letters
DOIs
Publication statusPublished - 1995

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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