Ultrashort dynamic response of vertical cavity surface-emitting quantum well lasers

Frank Jahnke; H. Christian Schneider; Stephan W. Koch

Ultrashort dynamic response of vertical cavity surface-emitting quantum well lasers

Frank Jahnke, H. Christian Schneider, Stephan W. Koch

Optical Sciences, College of

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Results of microscopic modeling of semiconductor vertical-cavity surface-emitting lasers (VCSELs) are discussed. The treatment of the laser as a nonequilibrium many-body system provides a detailed understanding of the various processes that determine the laser output and the electron-hole-plasma excitation. It is shown that the transient gain dynamics are strongly influenced by nonequilibrium carrier effects. These gain dynamics together with the cavity design determine the delayed onset and the temporal and spectral shape of the laser output. The theory is evaluated to investigate how the laser output properties can be controlled in terms of (1) excitation conditions of the VCSEL, (2) the mirror design, which allows us to change the cavity quality and the resonance frequency, and (3) the number and position of semiconductor quantum wells as active material.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Weng W. Chow, Marek Osinski
Pages	322-328
Number of pages	7
State	Published - Jan 1 1996
Event	Physics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA Duration: Jan 29 1996 → Feb 2 1996

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2693

Other

Other	Physics and Simulation of Optoelectronic Devices IV
City	San Jose, CA, USA
Period	1/29/96 → 2/2/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Cite this

Ultrashort dynamic response of vertical cavity surface-emitting quantum well lasers. / Jahnke, Frank; Schneider, H. Christian; Koch, Stephan W.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Weng W. Chow; Marek Osinski. 1996. p. 322-328 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2693).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jahnke, F, Schneider, HC & Koch, SW 1996, Ultrashort dynamic response of vertical cavity surface-emitting quantum well lasers. in WW Chow & M Osinski (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2693, pp. 322-328, Physics and Simulation of Optoelectronic Devices IV, San Jose, CA, USA, 1/29/96.

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AB - Results of microscopic modeling of semiconductor vertical-cavity surface-emitting lasers (VCSELs) are discussed. The treatment of the laser as a nonequilibrium many-body system provides a detailed understanding of the various processes that determine the laser output and the electron-hole-plasma excitation. It is shown that the transient gain dynamics are strongly influenced by nonequilibrium carrier effects. These gain dynamics together with the cavity design determine the delayed onset and the temporal and spectral shape of the laser output. The theory is evaluated to investigate how the laser output properties can be controlled in terms of (1) excitation conditions of the VCSEL, (2) the mirror design, which allows us to change the cavity quality and the resonance frequency, and (3) the number and position of semiconductor quantum wells as active material.

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