Abstract
Results of microscopic modeling of semiconductor vertical-cavity surface-emitting lasers (VCSELs) are discussed. The treatment of the laser as a nonequilibrium many-body system provides a detailed understanding of the various processes that determine the laser output and the electron-hole-plasma excitation. It is shown that the transient gain dynamics are strongly influenced by nonequilibrium carrier effects. These gain dynamics together with the cavity design determine the delayed onset and the temporal and spectral shape of the laser output. The theory is evaluated to investigate how the laser output properties can be controlled in terms of (1) excitation conditions of the VCSEL, (2) the mirror design, which allows us to change the cavity quality and the resonance frequency, and (3) the number and position of semiconductor quantum wells as active material.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | Weng W. Chow, Marek Osinski |
| Pages | 322-328 |
| Number of pages | 7 |
| Volume | 2693 |
| State | Published - 1996 |
| Externally published | Yes |
| Event | Physics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA Duration: Jan 29 1996 → Feb 2 1996 |
Other
| Other | Physics and Simulation of Optoelectronic Devices IV |
|---|---|
| City | San Jose, CA, USA |
| Period | 1/29/96 → 2/2/96 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Ultrashort dynamic response of vertical cavity surface-emitting quantum well lasers. / Jahnke, Frank; Schneider, H. Christian; Koch, Stephan W.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Weng W. Chow; Marek Osinski. Vol. 2693 1996. p. 322-328.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Ultrashort dynamic response of vertical cavity surface-emitting quantum well lasers
AU - Jahnke, Frank
AU - Schneider, H. Christian
AU - Koch, Stephan W
PY - 1996
Y1 - 1996
N2 - Results of microscopic modeling of semiconductor vertical-cavity surface-emitting lasers (VCSELs) are discussed. The treatment of the laser as a nonequilibrium many-body system provides a detailed understanding of the various processes that determine the laser output and the electron-hole-plasma excitation. It is shown that the transient gain dynamics are strongly influenced by nonequilibrium carrier effects. These gain dynamics together with the cavity design determine the delayed onset and the temporal and spectral shape of the laser output. The theory is evaluated to investigate how the laser output properties can be controlled in terms of (1) excitation conditions of the VCSEL, (2) the mirror design, which allows us to change the cavity quality and the resonance frequency, and (3) the number and position of semiconductor quantum wells as active material.
AB - Results of microscopic modeling of semiconductor vertical-cavity surface-emitting lasers (VCSELs) are discussed. The treatment of the laser as a nonequilibrium many-body system provides a detailed understanding of the various processes that determine the laser output and the electron-hole-plasma excitation. It is shown that the transient gain dynamics are strongly influenced by nonequilibrium carrier effects. These gain dynamics together with the cavity design determine the delayed onset and the temporal and spectral shape of the laser output. The theory is evaluated to investigate how the laser output properties can be controlled in terms of (1) excitation conditions of the VCSEL, (2) the mirror design, which allows us to change the cavity quality and the resonance frequency, and (3) the number and position of semiconductor quantum wells as active material.
UR - http://www.scopus.com/inward/record.url?scp=0029749476&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029749476&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0029749476
SN - 0819420670
SN - 9780819420671
VL - 2693
SP - 322
EP - 328
BT - Proceedings of SPIE - The International Society for Optical Engineering
A2 - Chow, Weng W.
A2 - Osinski, Marek
ER -